Datasheet > STW20N90K5

STW20N90K5

更新时间： 2024-11-24 14:58:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	291K
描述
N沟道900 V、0.21 Ohm典型值、20 A MDmesh K5功率MOSFET，TO-247封装

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STW20N90K5 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
Factory Lead Time：	9 weeks 6 days	风险等级：	2.09
Base Number Matches：	1

STW20N90K5 数据手册

STW20N90K5

Datasheet

N-channel 900 V, 0.21 Ω typ., 20 A MDmesh™ K5

Power MOSFET in a TO‑247 package

Features

max.

Order code

STW20N90K5

DS(on )

900 V

0.25 Ω

20 A

•

Industry’s lowest R_DS(on)x area

Industry’s best FoM (figure of merit)

Ultra-low gate charge

TO-247

100% avalanche tested

Zener-protected

D(2, TAB)

Applications

•

Switching applications

G(1)

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5

technology based on an innovative proprietary vertical structure. The result is a

dramatic reduction in on-resistance and ultra-low gate charge for applications

requiring superior power density and high efficiency.

S(3)

AM01475V1

Product status link

STW20N90K5

Product summary

Order code

Marking

STW20N90K5

20N90K5

TO-247

Package

Packing

Tube

DS11570 - Rev 3 - October 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...13

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