Datasheet > STW24N60DM2

STW24N60DM2

更新时间： 2023-12-20 18:44:45

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意法半导体 - STMICROELECTRONICS		/
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描述
N沟道600 V、0.175 Ohm典型值、18 A MDmesh DM2功率MOSFET，TO-247封装

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替代型号

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STW24N60DM2 数据手册

STB24N60DM2, STP24N60DM2,

STW24N60DM2

N-channel 600 V, 0.175 Ω typ., 18 A FDmesh II Plus™ low Q_g

Power MOSFETs in D²PAK, TO-220 and TO-247 packages

Datasheet

−

production data

Features

TAB

V_DS

T_Jmax

R_DS(on)

max

Order codes

I_D

D²PAK

STB24N60DM2

STP24N60DM2

STW24N60DM2

650 V

0.20 Ω

18 A

TO-220

• Extremely low gate charge and input

capacitance

• Lower R_DS(on)x area vs previous generation

• Low gate input resistance

• 100% avalanche tested

TO-247

Figure 1. Internal schematic diagram

• Zener-protected

• Extremely high dv/dt and avalanche

D(2, TAB)

capabilities

Applications

• Switching applications

G(1)

Description

These FDmesh II Plus™ low Q_gPower MOSFETs

with intrinsic fast-recovery body diode are

produced using a new generation of MDmesh™

technology: MDmesh II Plus™ low Q_g. These

revolutionary Power MOSFETs associate a

vertical structure to the company's strip layout to

yield one of the world's lowest on-resistance and

gate charge. They are therefore suitable for the

most demanding high efficiency converters and

ideal for bridge topologies and ZVS phase-shift

converters.

S(3)

AM01476v1

Table 1. Device summary

Order codes

Marking

Package

Packaging

STB24N60DM2

STP24N60DM2

STW24N60DM2

D²PAK

TO-220

TO-247

Tape and reel

24N60DM2

Tube

March 2014

DocID025499 Rev 3

1/21

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...21

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STW24N60DM2 替代型号

型号	品牌	替代类型	描述	数据表
STW21NM60ND	STMICROELECTRONICS	类似代替	N-channel 600 V, 0.17 ヘ, 17 A FDmesh⑩ II Powe

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