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STW25NM50N PDF预览

STW25NM50N

更新时间: 2024-01-18 15:17:04
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
16页 681K
描述
N-CHANNEL 500V 0.11ohm - 22 A TO-220/FP/D/IPAK/TO-247 SECOND GENERATION MDmesh MOSFET

STW25NM50N 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-247AC包装说明:TO-247, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.79
Is Samacsys:N雪崩能效等级(Eas):350 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):22 A最大漏极电流 (ID):22 A
最大漏源导通电阻:0.14 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247ACJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):160 W最大脉冲漏极电流 (IDM):88 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STW25NM50N 数据手册

 浏览型号STW25NM50N的Datasheet PDF文件第2页浏览型号STW25NM50N的Datasheet PDF文件第3页浏览型号STW25NM50N的Datasheet PDF文件第4页浏览型号STW25NM50N的Datasheet PDF文件第5页浏览型号STW25NM50N的Datasheet PDF文件第6页浏览型号STW25NM50N的Datasheet PDF文件第7页 
STP25NM50N - STF25NM50N  
STB25NM50N/-1 - STW25NM50N  
N-CHANNEL 500V 0.11 - 22 A TO-220/FP/D²/I²PAK/TO-247  
SECOND GENERATION MDmesh™ MOSFET  
Table 1: General Features  
Figure 1: Package  
TYPE  
V
(@Tj  
)
I
D
R
DS(on)  
DSS  
MAX  
STB25NM50N-1  
STF25NM50N  
STP25NM50N  
STW25NM50N  
STB25NM50N  
550V  
550V  
550V  
550V  
550V  
22 A 0.140 Ω  
22 A(*) 0.140 Ω  
22 A 0.140 Ω  
22 A 0.140 Ω  
22 A 0.140 Ω  
3
3
2
1
2
1
TO-220  
I²PAK  
HIGH dv/dt AND AVALANCHE CAPABILITIES  
100% AVALANCHE TESTED  
LOW INPUT CAPACITANCE AND GATE  
CHARGE  
3
1
D²PAK  
3
3
2
2
1
1
LOW GATE INPUT RESISTANCE  
TO-247  
TO-220FP  
DESCRIPTION  
The STx25NM50N is realized with the second  
generation of MDmesh Technology. This revolu-  
tionary MOSFET associates a new vertical struc-  
ture to the Company's strip layout to yield one of  
the world's lowest on-resistance and gate charge.  
It is therefore suitable for the most demanding high  
efficiency converters  
Figure 2: Internal Schematic Diagram  
APPLICATIONS  
The MDmesh™ II family is very suitable for in-  
creasing power density of high voltage converters  
allowing system miniaturization and higher effi-  
ciencies.  
Table 2: Order Codes  
SALES TYPE  
STP25NM50N  
STF25NM50N  
STB25NM50N-1  
STW25NM50N  
STB25NM50N  
MARKING  
P25NM50N  
F25NM50N  
B25NM50N  
W25NM50N  
B25NM50N  
PACKAGE  
TO-220  
TO-220FP  
I²PAK  
PACKAGING  
TUBE  
TUBE  
TUBE  
TO-247  
D²PAK  
TUBE  
TAPE & REEL  
Rev. 9  
October 2005  
1/16  

STW25NM50N 替代型号

型号 品牌 替代类型 描述 数据表
STW13NK100Z STMICROELECTRONICS

类似代替

N-CHANNEL 1000V - 0.56 OHM - 13A TO-247 Zener-Protected SuperMESH Power MOSFET
STW20NK50Z STMICROELECTRONICS

类似代替

N-CHANNEL 500V -0.23 OHM - 17A TO-220/D2PAK/I2SPAK/TO-247
STW12NK90Z STMICROELECTRONICS

类似代替

N-CHANNEL 900V - 0.72 ohm - 11A TO-247 Zener-Protected SuperMESH Power MOSFET

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