Datasheet > STT3470N

STT3470N

更新时间： 2024-09-21 08:58:47

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
2页	184K
描述
N-Channel Enhancement Mode Mos.FET

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STT3470N 数据手册

STT3470N

2.2 A, 100 V, R_DS(ON)280 m

N-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

TSOP-6

These miniature surface mount MOSFETs utilize

a High Cell Density trench process to provide Low R_DS(on)

and to ensure minimal power loss and heat dissipation.

Typical applications are DC-DC converters and power

management in portable and battery-powered products

such as computers, printers, PCMCIA cards, cellular

and cordless telephones.

D G

FEATURES



Low R_DS(on)provides higher efficiency and extend

battery life

Millimeter

Min. Max.

Millimeter



Low thermal impedance copper leadframe TSOP-6

saves board space

Fast switching speed

REF.

Min.

Max.

2.70

2.60

1.40

3.10

3.00

1.80

0.10

0.60 REF.

0.12 REF.



1.10 MAX.

1.90 REF.

0°

10°

High performance trench technology

0.95 REF.

0.30

0.50

PACKAGE INFORMATION

Package

MPQ

LeaderSize

TSOP-6

7’ inch

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current ¹

Pulsed Drain Current ²

V_DS

V_GS

I_D

I_DM

I_S

100

±20

2.2

±10

1.1

T_A= 25°C

Continuous Source Current (Diode Conduction) ¹

Power Dissipation ¹

P_D

Tj, Tstg

°C

Operating Junction and Storage Temperature Range

-55 ~ 150

Thermal Resistance Ratings

Symbol

Parameter

Typ.

Max.

Unit

t ≦ 10 sec

130

110

150

Maximum Junction to Ambient ¹

R_JA

°C / W

Steady State

Notes

1. Surface Mounted on 1” x 1” FR4 Board.

2. Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

30-Dec-2010 Rev. A

Page 1 of 2

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