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STT3PF20V PDF预览

STT3PF20V

更新时间: 2024-09-21 22:20:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
8页 332K
描述
P-CHANNEL 20V - 0.14 ohm - 2.2A SOT23-6L 2.7-DRIVE STripFET⑩ II POWER MOSFET

STT3PF20V 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:SOT-23, 6 PIN
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.81
Is Samacsys:N其他特性:LOW THRESHOLD
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):2.2 A最大漏极电流 (ID):2.2 A
最大漏源导通电阻:0.25 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):1.6 W最大脉冲漏极电流 (IDM):8.8 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STT3PF20V 数据手册

 浏览型号STT3PF20V的Datasheet PDF文件第2页浏览型号STT3PF20V的Datasheet PDF文件第3页浏览型号STT3PF20V的Datasheet PDF文件第4页浏览型号STT3PF20V的Datasheet PDF文件第5页浏览型号STT3PF20V的Datasheet PDF文件第6页浏览型号STT3PF20V的Datasheet PDF文件第7页 
STT3PF20V  
P-CHANNEL 20V - 0.14 - 2.2A SOT23-6L  
2.7-DRIVE STripFET™ II POWER MOSFET  
V
DSS  
R
I
D
TYPE  
DS(on)  
STT3PF20V  
TYPICAL R (on) = 0.14 (@4.5V)  
DS  
TYPICAL R (on) = 0.20 (@2.7V)  
DS  
ULTRA LOW THRESHOLD GATE DRIVE  
(2.7V)  
STANDARD OUTLINE FOR EASY  
AUTOMATED SURFACE MOUNT ASSEMBLY  
SOT23-6L  
DESCRIPTION  
This Power MOSFET is the latest development of  
STMicroelectronis unique "Single Feature Size™"  
strip-based process. The resulting transistor  
shows extremely high packing density for low on-  
resistance, rugged avalanche characteristics and  
less critical alignment steps therefore a remark-  
able manufacturing reproducibility.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
DC-DC CONVERTERS  
BATTERY MANAGEMENT IN NOMADIC  
EQUIPMENT  
CELLULAR  
MARKING  
STP2  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
20  
Unit  
V
V
Drain-source Voltage (V = 0)  
DS  
GS  
V
Drain-gate Voltage (R = 20 k )  
20  
V
DGR  
GS  
V
Gate- source Voltage  
± 12  
2.2  
V
GS  
I
Drain Current (continuous) at T = 25°C  
A
D
C
I
Drain Current (continuous) at T = 100°C  
1.39  
8.8  
A
D
C
I
(
Drain Current (pulsed)  
A
DM  
P
Total Dissipation at T = 25°C  
1.6  
W
tot  
C
(
Pulse width limited by safe operating area.  
Note: P-CHANNEL MOSFET actual polarity of voltages and current  
has to be reversed  
October 2002  
1/8  
.

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