Datasheet > STT4443

STT4443

更新时间： 2024-02-20 21:39:46

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SECOS		/
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4页	672K
描述
-2.3A , -30V , RDS(ON) 120 m P-Channel Enhancement Mode MOSFET

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STT4443 数据手册

STT4443

-2.3A , -30V , R_DS(ON)120 m

P-Channel Enhancement Mode MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

TSOP-6

STT4443 utilized advanced processing techniques to

achieve the lowest possible on-resistance, extremely

efficient and cost-effectiveness device. The TSOP-6

package is universally used for all commercial-industrial

applications.

FEATURES



Simple Drive Requirement

Smaller Outline Package

Surface mount package

D G

MARKING

Millimeter

Min. Max.

Millimeter

REF.

Min.

Max.

2.70

2.60

1.40

1.10 MAX.

1.90 REF.

3.10

3.00

1.80

0.10

0.60 REF.

0.12 REF.

0°

4443



Date Code



10°

0.95 REF.

0.30

0.50

PACKAGE INFORMATION

TOP VIEW

Package

MPQ

Leader Size

TSOP-6

7 inch

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_DS

Ratings

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

-2.3

Continuous Drain Current ³

I_D

-1.8

Pulsed Drain Current ¹

Power Dissipation

I_DM

P_D

-10

T_A=25°C

1.14

Linear Derating Factor

0.01

W / °C

°C

Operating Junction and Storage Temperature Range

T_j, T_stg

-55~150

Thermal Resistance Rating

Maximum Junction to Ambient ³

R_

110

°C / W

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

02-Dec-2011 Rev. B

Page 1 of 4

12 3 4

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