Datasheet > STT3998N

STT3998N

更新时间： 2024-09-22 12:20:19

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描述
Dual N-Ch Enhancement Mode Mos.FET

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STT3998N 数据手册

STT3998N

Dual N-Ch Enhancement Mode Mos.FET

3.7 A, 20 V, R_DS(ON)58 m

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

TSOP-6

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density

trench process to provide low R_DS(on)and to ensure minimal power

loss and heat dissipation. Typical applications are DC-DC converters

and power management in portable and battery-powered products

such as computers, printers, PCMCIA cards, cellular and cordless

telephones.

FEATURES

D G



Low R_DS(on)provide higher efficiency and extends battery

life.



Low thermal impedance copper leadframe TSOP-6 saves

board space.

Millimeter

Min. Max.

Millimeter

REF.

Min.

Max.



Fast switching speed.

High performance trench technology.

2.70

2.60

1.40

3.10

3.00

1.80

0.10

0.60 REF.

0.12 REF.

1.10 MAX.

1.90 REF.

0°

10°

0.95 REF.

0.30

0.50

PRODUCT SUMMARY

V_DS(V)

R_DS(on) (m

58@V_GS= 4.5V

82@V_GS= 2.5V

I_D(A)

3.7

3.1

ABSOLUTE MAXIMUM RATINGS(T_A=25°C UNLESS OTHERWISE NOTED)

Ratings

Maximum

Parameter

Symbol

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±12

T_A= 25°C

T_A= 70°C

3.7

2.9

1.05

1.15

0.7

Continuous Drain Current ^a

I_D

Pulsed Drain Current ^b

Continuous Source Current (Diode Conduction) ^a

Power Dissipation ^a

I_DM

I_S

T_A= 25°C

T_A= 70°C

P_D

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ 150

°C

THERMAL RESISTANCE RATINGS

Symbol

Parameter

Typ.

Max.

Unit

t ≦ 10 sec

R_JA

130

110

150

Maximum Junction to Ambient ^a

°C / W

Steady State

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

27-Aug-2010 Rev. A

Page 1 of 2

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