Datasheet > STT3981_10

STT3981_10

更新时间： 2024-09-22 08:58:47

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
5页	293K
描述
P-Channel Enhancement Mode Mos.FET

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STT3981_10 数据手册

STT3981

-1.6 A, -20 V, RDS(ON) 180 mΩ

P-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

The STT3981 utilized advance processing techniques to achieve the lowest possible on-resistance, extremely

efficient and cost-effectiveness device. The STT3981 is universally used for all commercial-industrial applications.

FEATURES

z Low On-Resistance

z Low Gate Charge

PACKAGE DIMENSIONS

Millimeter

Min. Max.

1.10 Max

Millimeter

Min. Max.

REF.

0.45 Ref

0.60 Ref

0.10

1.00

0.70

0°

0.30

10°

0.12 Ref

0.50

2.70

2.60

1.40

3.10

3.00

1.80

0.95 Ref

1.90 Ref

ABSOLUTE MAXIMUM RATINGS

Parameter

Drain-Source Voltage

Symbol

V_DS

Ratings

-20

Unit

Gate-Source Voltage

V_GS

±8

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

-1.6

-1.3

-8

0.8

Continuous Drain Current³

Pulsed Drain Current¹

Power Dissipation

P_D@T_A=25℃

Linear Derating Factor

Operating Junction and Storage Temperature Range

0.006

-55 ~ +150

W/℃

℃

T_J, T_STG

THERMAL DATA

Parameter

Symbol

Ratings

Unit

Thermal Resistance Junction-ambient³(Max)

R_θJA

150

℃/W

10-Feb-2010 Rev. C

Page 1 of 5

12 3 4 5

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