Datasheet > STT3930N

STT3930N

更新时间： 2024-01-09 11:06:23

品牌	Logo	应用领域
SECOS		/
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描述
N-Channel Enhancement Mode MOSFET

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STT3930N 数据手册

STT3930N

3.5A , 30V , R_DS(ON)58mΩ

N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

TSOP-6

These miniature surface mount MOSFETs utilize a high

cell density trench process to provide low R_DS(on)and to

ensure minimal power loss and heat dissipation.

FEATURES

ꢀ

Low R_DS(on)provides higher efficiency and extends

battery life

ꢀ

Low thermal impedance copper leadframe TSOP-6

saves board space

D G

ꢀ

Fast switching speed

High performance trench technology

Millimeter

Min. Max.

Millimeter

APPLICATION

REF.

Min.

Max.

DC-DC converters and power management in portable

2.70

2.60

1.40

3.10

3.00

1.80

0.10

0.60 REF.

0.12 REF.

and battery-powered products such as computers, printers,

PCMCIA cards, cellular and cordless telephones.

1.10 MAX.

1.90 REF.

0°

10°

0.95 REF.

0.30

0.50

PACKAGE INFORMATION

Package

MPQ

Leader Size

TSOP-6

7 inch

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

3.5

Continuous Drain Current ¹

I_D

2.8

Pulsed Drain Current ²

I_DM

I_S

Continuous Source Current (Diode Conduction) ¹

Power Dissipation ¹

1.25

1.3

T_A=25°C

T_A=70°C

P_D

°C

0.8

Operating Junction and Storage Temperature Range

T_J, T_STG

-55~150

Thermal Resistance Rating

t ≦ 10 sec

100

166

Maximum Junction to Ambient ¹

R_θ

°C / W

Steady State

Notes:

1. Surface Mounted on 1” x 1” FR4 Board.

2. Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

25-Nov-2013 Rev. A

Page 1 of 2

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