Datasheet > STT3471P

STT3471P

更新时间： 2024-02-14 04:09:59

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
2页	169K
描述
P-Channel Enhancement Mode MOSFET

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STT3471P 数据手册

STT3471P

-2A, -100V, R_DS(ON)350 m

P-Channel Enhancement Mode MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

TSOP-6

These miniature surface mount MOSFETs utilize

a high cell density trench process to provide Low R_DS(on)

and to ensure minimal power loss and heat dissipation.

FEATURES



Low R_DS(on)provides higher efficiency and extends

battery life.



Low thermal impedance copper leadframe TSOP-6

saves board space.

Fast switching speed.

D G



High performance trench technology.

Millimeter

Min. Max.

Millimeter

REF.

APPLICATION

Min.

Max.

2.70

2.60

1.40

3.10

3.00

1.80

0.10

DC-DC converters and power

management in portable and battery-powered products

such as computers, printers, PCMCIA cards, cellular

0.60 REF.

0.12 REF.

1.10 MAX.

1.90 REF.

0°

10°

0.95 REF.

0.30

0.50

and cordless telephones.

PACKAGE INFORMATION

Package

MPQ

Leader Size

TSOP-6

7’ inch

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_DS

Rating

-100

±20

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_A= 25°C

T_A= 70°C

2.0

Continuous Drain Current ¹

I_D

1.6

Pulsed Drain Current ²

Continuous Source Current (Diode Conduction) ¹

I_DM

I_S

-8

-2.1

T_A= 25°C

T_A= 70°C

2.0

Power Dissipation ¹

P_D

1.3

Operating Junction and Storage Temperature Range

Tj, Tstg

-55~150

°C

Thermal Resistance Rating

R_JA

62.5

110

Maximum Junction to Ambient ¹

t ≦ 5 sec

°C / W

Notes:

1. Surface Mounted on 1” x 1” FR4 Board.

2. Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

08-Apr-2011 Rev. A

Page 1 of 2

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