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STT3808NE PDF预览

STT3808NE

更新时间: 2024-01-25 17:22:35
品牌 Logo 应用领域
SECOS /
页数 文件大小 规格书
4页 753K
描述
N-Channel Enhancement Mode Mos.FET

STT3808NE 数据手册

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STT3808NE  
6A , 20V , RDS(ON) 20 m  
N-Channel Enhancement Mode Mos.FET  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen and lead-free  
Key Features:  
TSOP-6  
Low rDS(on) trench technology  
Low thermal impedance  
Fast switching speed  
A
E
L
6
5
4
Typical Applications:  
B
Battery Powered Instruments  
Portable Computing  
Mobile Phones  
Fast switch  
GPS Units and Media Players  
1
2
3
F
C
H
J
K
D G  
Millimeter  
Min. Max.  
Millimeter  
REF.  
REF.  
Min.  
Max.  
PACKAGE INFORMATION  
A
B
C
D
E
F
2.70  
2.60  
1.40  
3.10  
3.00  
1.80  
G
H
J
K
L
0
0.10  
0.60 REF.  
0.12 REF.  
Package  
MPQ  
3K  
Leader Size  
1.10 MAX.  
1.90 REF.  
0°  
10°  
0.95 REF.  
TSOP-6  
7 inch  
0.30  
0.50  
G1  
S2  
G2  
D1  
S2  
D2  
ESD  
Protection Diode  
2KV  
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)  
Parameter Symbol  
Ratings  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
20  
±8  
V
TA= 25°C  
6
3.6  
Continuous Drain Current 1  
ID  
A
TA= 100°C  
Pulsed Drain Current 2  
IDM  
IS  
22  
A
A
Continuous Source Current (Diode Conduction) 1  
Power Dissipation 1  
1
TA= 25°C  
0.83  
0.3  
PD  
W
TA= 100°C  
Operating Junction and Storage Temperature Range  
TJ, TSTG  
-55 ~ 150  
°C  
Thermal Resistance Ratings  
t10 sec  
110  
150  
Maximum Junction to Ambient 1  
RθJA  
°C / W  
Steady State  
Notes  
1. Surface Mounted on 1” x 1” FR4 Board.  
2. Pulse width limited by maximum junction temperature.  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
18-Oct-2013 Rev. A  
Page 1 of 4  

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