Datasheet > STT3490N

STT3490N

更新时间： 2024-09-21 08:58:47

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	632K
描述
N-Channel Enhancement Mode Mos.FET

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STT3490N 数据手册

STT3490N

N-Channel Enhancement Mode Mos.FET

1.2 A, 150 V, R_DS(ON)700 m

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

TSOP-6

KEY FEATURES



Low R_DS(on)trench technology.

Low thermal impedance.

Fast switching speed.

TYPICAL APPLICATIONS



White LED boost converters.

Automotive Systems

Industrial DC/DC Conversion Circuits

D G

PRODUCT SUMMARY

Millimeter

Min. Max.

Millimeter

V_DS(V)

R_DS(on) (m

700@V_GS= 10V

1200@V_GS= 4.5V

I_D(A)

1.2

REF.

Min.

Max.

2.70

2.60

1.40

3.10

3.00

1.80

0.10

150

0.60 REF.

0.12 REF.

1.10 MAX.

1.90 REF.

0°

10°

0.95 REF.

0.30

0.50

ABSOLUTE MAXIMUM RATINGS(T_A=25°C UNLESS OTHERWISE NOTED)

Ratings

Maximum

150

Parameter

Symbol

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±20

T_A= 25°C

T_A= 70°C

1.2

±10

2.5

Continuous Drain Current ^a

Pulsed Drain Current ^b

Continuous Source Current (Diode Conduction) ^a

I_D

I_DM

I_S

T_A= 25°C

T_A= 70°C

1.3

Power Dissipation ^a

P_D

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ 150

°C

THERMAL RESISTANCE RATINGS

Symbol

Parameter

Maximum

Unit

t ≦ 10 sec

R_JA

62.5

110

Maximum Junction to Ambient ^a

°C / W

Steady State

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

25-Aug-2010 Rev. B

Page 1 of 4

12 3 4

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