5秒后页面跳转
STP11NM60N PDF预览

STP11NM60N

更新时间: 2024-11-23 04:01:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
17页 471K
描述
N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET

STP11NM60N 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:TO-220AB
包装说明:ROHS COMPLIANT, TO-220, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.67Is Samacsys:N
雪崩能效等级(Eas):200 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):10 A最大漏极电流 (ID):10 A
最大漏源导通电阻:0.45 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):100 W最大脉冲漏极电流 (IDM):40 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STP11NM60N 数据手册

 浏览型号STP11NM60N的Datasheet PDF文件第2页浏览型号STP11NM60N的Datasheet PDF文件第3页浏览型号STP11NM60N的Datasheet PDF文件第4页浏览型号STP11NM60N的Datasheet PDF文件第5页浏览型号STP11NM60N的Datasheet PDF文件第6页浏览型号STP11NM60N的Datasheet PDF文件第7页 
STD11NM60N - STD11NM60N-1  
STP11NM60N - STF11NM60N  
N-channel 600V - 0.37- 10A - TO-220 - TO-220FP- IPAK - DPAK  
Second generation MDmesh™ Power MOSFET  
General features  
VDSS  
(@Tjmax)  
Type  
RDS(on)  
ID  
3
2
3
1
2
1
STD11NM60N  
STD11NM60N-1  
STF11NM60N  
STP11NM60N  
650V  
650V  
650V  
650V  
<0.45Ω  
<0.45Ω  
<0.45Ω  
<0.45Ω  
10A  
10A  
10A (1)  
IPAK  
TO-220  
10A  
3
1. Limited only by maximum temperature allowed  
1
3
2
1
DPAK  
100% avalanche tested  
TO-220FP  
Low input capacitance and gate charge  
Low gate input resistancel  
Description  
Internal schematic diagram  
This series of devices is realized with the second  
generation of MDmesh™ Technology. This  
revolutionary Power MOSFET associates a new  
vertical structure to the Company’s strip layout to  
yield one of the world’s lowest on-resistance and  
gate charge. It is therefore suitable for the most  
demanding high efficiency converters  
Applications  
Switching application  
Order codes  
Part number  
Marking  
Package  
Packaging  
STD11NM60N-1  
STD11NM60N  
STP11NM60N  
STF11NM60N  
D11NM60N  
D11NM60N  
P11NM60N  
F11NM60N  
IPAK  
DPAK  
Tube  
Tape & reel  
Tube  
TO-220  
TO-220FP  
Tube  
November 2006  
Rev 2  
1/17  
www.st.com  
17  

与STP11NM60N相关器件

型号 品牌 获取价格 描述 数据表
STP11NM60ND STMICROELECTRONICS

获取价格

N-channel 600V - 0.37Ω - 10A - FDmesh™ II Pow
STP11NM60Z STMICROELECTRONICS

获取价格

11A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
STP11NM60ZFP STMICROELECTRONICS

获取价格

11A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220FP, 3 PI
STP11NM65N STMICROELECTRONICS

获取价格

N-channel 650 V, 0.425 Ω typ., 11 A MDmeshâ„
STP11NM80 STMICROELECTRONICS

获取价格

N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh?Power MOSFET
STP11NM80_10 STMICROELECTRONICS

获取价格

N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power M
STP-1200-2115 BEL

获取价格

Power in the Round 100 VA to 2000 VA
STP120N4F6 STMICROELECTRONICS

获取价格

N沟道40 V、3.8 mOhm、80 A STripFET(TM) VI DeepGAT
STP120NF04 STMICROELECTRONICS

获取价格

N-channel 40V - 0.0047ohm - 120A TO-220 STripFET II MOSFET
STP120NF04_06 STMICROELECTRONICS

获取价格

N-channel 40V - 0.0047ohm - 120A TO-220 STripFET II MOSFET