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STP11NM65N PDF预览

STP11NM65N

更新时间: 2024-01-24 22:18:53
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
21页 1263K
描述
N-channel 650 V, 0.425 Ω typ., 11 A MDmesh™II Power MOSFET in DPAK, TO-220FP, I²PAKFP and TO-220 packages

STP11NM65N 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
零件包装代码:TO-220AB包装说明:ROHS COMPLIANT, TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:8.48
Is Samacsys:N雪崩能效等级(Eas):300 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:650 V
最大漏极电流 (Abs) (ID):12 A最大漏极电流 (ID):12 A
最大漏源导通电阻:0.38 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):125 W最大脉冲漏极电流 (IDM):48 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STP11NM65N 数据手册

 浏览型号STP11NM65N的Datasheet PDF文件第2页浏览型号STP11NM65N的Datasheet PDF文件第3页浏览型号STP11NM65N的Datasheet PDF文件第4页浏览型号STP11NM65N的Datasheet PDF文件第5页浏览型号STP11NM65N的Datasheet PDF文件第6页浏览型号STP11NM65N的Datasheet PDF文件第7页 
STD11NM65N, STF11NM65N,  
STFI11NM65N, STP11NM65N  
N-channel 650 V, 0.425 Ω typ., 11 A MDmesh™II Power MOSFET  
in DPAK, TO-220FP, I²PAKFP and TO-220 packages  
Datasheet  
-
production data  
Features  
TAB  
VDSS  
TJmax  
@
RDS(on)  
max  
3
Order codes  
ID  
1
3
2
DPAK  
1
STD11NM65N  
STF11NM65N  
STFI11NM65N  
STP11NM65N  
TO-220FP  
710 V  
< 0.455 Ω  
11 A  
TAB  
100% avalanche tested  
3
1
2
2
1
3
Low input capacitance and gate charge  
low gate input resistance  
TO-220  
I²PAKFP  
Figure 1. Internal schematic diagram  
Applications  
Switching applications  
'ꢅꢆꢇĆ7$%ꢈ  
Description  
These devices are N-channel Power MOSFETs  
developed using the second generation of  
MDmesh™ technology. This revolutionary Power  
MOSFET associates a vertical structure to the  
company’s strip layout to yield one of the world’s  
lowest on-resistance and gate charge. It is  
therefore suitable for the most demanding high  
efficiency converters.  
*ꢅꢁꢈ  
6ꢅꢉꢈ  
$0ꢀꢁꢂꢃꢄYꢁ  
Table 1. Device summary  
Order codes  
Marking  
Packages  
Packaging  
STD11NM65N  
STF11NM65N  
STFI11NM65N  
STP11NM65N  
DPAK  
TO-220FP  
I²PAKFP  
TO-220  
Tape and reel  
11NM65N  
Tube  
July 2013  
Doc ID 13476 Rev 4  
1/21  
This is information on a product in full production.  
www.st.com  
 

STP11NM65N 替代型号

型号 品牌 替代类型 描述 数据表
STW11NM65N STMICROELECTRONICS

类似代替

12A, 650V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB, ROHS COMPLIANT, TO-247, 3 PIN
STP14NM65N STMICROELECTRONICS

类似代替

N-channel 650 V, 0.33 Ω, 12 A MDmesh™ II Powe

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