5秒后页面跳转
STP120NH03L PDF预览

STP120NH03L

更新时间: 2024-01-22 22:35:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
17页 509K
描述
N-channel 30V - 0.005ohm - 60A - TO-220 / D2PAK / I2PAK STripFET Power MOSFET for DC-DC conversion

STP120NH03L 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.82
Is Samacsys:N其他特性:LOW THRESHOLD
雪崩能效等级(Eas):700 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):60 A最大漏极电流 (ID):60 A
最大漏源导通电阻:0.0105 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):245
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):115 W
最大脉冲漏极电流 (IDM):240 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STP120NH03L 数据手册

 浏览型号STP120NH03L的Datasheet PDF文件第2页浏览型号STP120NH03L的Datasheet PDF文件第3页浏览型号STP120NH03L的Datasheet PDF文件第4页浏览型号STP120NH03L的Datasheet PDF文件第5页浏览型号STP120NH03L的Datasheet PDF文件第6页浏览型号STP120NH03L的Datasheet PDF文件第7页 
STB120NH03L - STI120NH03L  
STP120NH03L  
N-channel 30V - 0.005- 60A - TO-220 / D2PAK / I2PAK  
STripFET™ Power MOSFET for DC-DC conversion  
General features  
Type  
VDSS  
RDS(on)  
ID  
STB120NH03L  
STP120NH03L  
STI120NH03L  
30V  
30V  
30V  
<0.0055Ω  
<0.0055Ω  
<0.0055Ω  
60(1)  
60(1)  
60(1)  
3
3
1
2
1
D2PAK  
TO-220  
1. Value limited by wire bonding  
R  
*Qg industry’s benchmark Low  
DS(on)  
3
2
1
Conduction losses reduced  
Switching losses reduced  
Low Threshold device  
I2PAK  
Description  
Internal schematic diagram  
These devices utilizes the latest advanced design  
rules of ST’s proprietary STripFET™ technology.  
It is ideal in high performance DC-DC converter  
applications where efficiency is to be achieved at  
very high output currents.  
Applications  
Switching application  
Order codes  
Part number  
Marking  
Package  
Packaging  
STB120NH03L  
STI120NH03L  
STP120NH03L  
B120NH03L  
120NH03L  
P120NH03L  
D2PAK  
PAK  
Tape & reel  
Tube  
TO-220  
Tube  
February 2007  
Rev 7  
1/17  
www.st.com  
17  

STP120NH03L 替代型号

型号 品牌 替代类型 描述 数据表
STD100NH03L STMICROELECTRONICS

类似代替

N-CHANNEL 30V - 0.005 W - 60A DPAK STripFET⑩

与STP120NH03L相关器件

型号 品牌 获取价格 描述 数据表
STP12A60 SEMIWELL

获取价格

Bi-Directional Triode Thyristor
STP12A80 SEMIWELL

获取价格

Bi-Directional Triode Thyristor
STP12IE90F4 STMICROELECTRONICS

获取价格

Emitter Switched Bipolar Transistor ESBT 900 V - 12A - 0.083 ohm
STP12IE95F4 STMICROELECTRONICS

获取价格

Emitter Switched Bipolar Transistor ESBT 950 V - 12A - 0.083 ohm
STP12N120K5 STMICROELECTRONICS

获取价格

N沟道1200 V、0.62 Ohm典型值、12 A MDmesh K5功率MOSFET,
STP12N50M2 STMICROELECTRONICS

获取价格

N沟道500 V、0.325 Ohm典型值、10 A MDmesh M2功率MOSFET,
STP12N60M2 STMICROELECTRONICS

获取价格

N沟道600 V、0.395 Ohm典型值、9 A MDmesh M2功率MOSFET,T
STP12N65M2 STMICROELECTRONICS

获取价格

N沟道650 V、0.42 Ohm典型值、8 A MDmesh M2功率MOSFET,TO
STP12N65M5 STMICROELECTRONICS

获取价格

N-channel 650 V, 0.39 Ohm, 8.5 A MDmesh V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK
STP12NB30 STMICROELECTRONICS

获取价格

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET