Datasheet > STP11NM80_10

STP11NM80_10

更新时间： 2024-11-23 06:14:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
17页	946K
描述
N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, TO-247

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中文翻译

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数据手册

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STP11NM80_10 数据手册

STB11NM80, STF11NM80

STP11NM80, STW11NM80

N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET

TO-220, TO-220FP, D²PAK, TO-247

Features

R_DS(on)

max

Type

V_DSS

R_DS(on)*Q_g

I_D

STB11NM80

STF11NM80

STP11NM80

STW11NM80

D²PAK

TO-247

800 V < 0.40 Ω

14Ω*nC

11 A

■ Low input capacitance and gate charge

■ Low gate input resistance

TO-220FP

TO-220

■ Best R

*Qg in the industry

DS(on)

Application

Figure 1.

Internal schematic diagram

■ Switching applications

Description

$ꢅꢆꢇ

The MDmesh™ associates the multiple drain

process with the company’s PowerMesh™

horizontal layout assuring an outstanding low on-

resistance. The adoption of the company’s

proprietary strip technique yields overall dynamic

performance that is significantly better than that of

similar competition’s products.

'ꢅꢁꢇ

3ꢅꢈꢇ

!-ꢀꢁꢂꢃꢄVꢁ

Table 1.

Device summary

Order codes

Marking

Package

D²PAK

Packaging

STB11NM80

STF11NM80

STP11NM80

STW11NM80

B11NM80

F11NM80

P11NM80

W11NM80

Tape and reel

TO-220FP

TO-220

Tube

TO-247

March 2010

Doc ID 9241 Rev 10

1/17

www.st.com

12 3 4 5 6 7...17

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