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STP12NK60Z PDF预览

STP12NK60Z

更新时间: 2024-10-01 06:14:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
15页 838K
描述
N-channel 650 V @Tjmax, 0.53 Ω, 10 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESH™ Power MOSFET

STP12NK60Z 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
风险等级:5.81其他特性:AVALANCHE RATED, HIGH RELIABILITY
雪崩能效等级(Eas):260 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):10 A
最大漏极电流 (ID):10 A最大漏源导通电阻:0.64 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):150 W
最大脉冲漏极电流 (IDM):40 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STP12NK60Z 数据手册

 浏览型号STP12NK60Z的Datasheet PDF文件第2页浏览型号STP12NK60Z的Datasheet PDF文件第3页浏览型号STP12NK60Z的Datasheet PDF文件第4页浏览型号STP12NK60Z的Datasheet PDF文件第5页浏览型号STP12NK60Z的Datasheet PDF文件第6页浏览型号STP12NK60Z的Datasheet PDF文件第7页 
STP12NK60Z  
STF12NK60Z, STW12NK60Z  
N-channel 650 V @Tjmax, 0.53 , 10 A TO-220, TO-220FP, TO-247  
Zener-protected SuperMESH™ Power MOSFET  
Features  
VDSS  
(@Tjmax)  
RDS(on)  
max  
Type  
ID  
PW  
3
3
2
2
STP12NK60Z  
STF12NK60Z  
STW12NK60Z  
650 V  
650 V  
650 V  
<0.640 10 A 150 W  
<0.640 10 A 35 W  
<0.640 10 A 150 W  
1
1
TO-220  
TO-220FP  
Extremely high dv/dt capability  
100% avalanche tested  
3
2
1
TO-247  
Gate charge minimized  
Very low intrinsic capacitances  
Very good manufacturing repeatability  
Figure 1.  
Internal schematic diagram  
Application  
D(2)  
Switching applications  
Description  
The SuperMESH™ series is obtained through an  
extreme optimization of ST’s well established  
strip-based PowerMESH™ layout. In addition to  
pushing on-resistance significantly down,  
specialties is taken to ensure a very good dv/dt  
capability for the most demanding application.  
Such series complements ST full range of high  
voltage Power MOSFETs.  
G(1)  
S(3)  
AM01476v1  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STP12NK60Z  
STF12NK60Z  
STW12NK60Z  
P12NK60Z  
F12NK60Z  
W12NK60Z  
TO-220  
TO-220FP  
TO-247  
Tube  
Tube  
Tube  
October 2009  
Doc ID 11324 Rev 7  
1/15  
www.st.com  
15  

STP12NK60Z 替代型号

型号 品牌 替代类型 描述 数据表
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