Datasheet > STP12N65M2

STP12N65M2

更新时间： 2024-10-02 14:58:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	671K
描述
N沟道650 V、0.42 Ohm典型值、8 A MDmesh M2功率MOSFET，TO-220封装

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中文翻译

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技术参数
数据手册

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STP12N65M2 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	Factory Lead Time：	16 weeks
风险等级：	5.75	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

STP12N65M2 数据手册

STP12N65M2

N-channel 650 V, 0.42 Ω typ., 8 A MDmesh™ M2

Power MOSFET in a TO-220 package

Datasheet - production data

Features

Order code

V_DS

R_DS(on)max.

I_D

TAB

STP12N65M2

650 V

0.50 Ω

8 A



Extremely low gate charge

Excellent output capacitance (C_OSS) profile

100% avalanche tested

Zener-protected

TO-220

Applications



Switching applications

Figure 1: Internal schematic diagram

Description

This device is an N-channel Power MOSFET

developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical

structure, the device exhibits low on-resistance

and optimized switching characteristics,

rendering it suitable for the most demanding high

efficiency converters.

Table 1: Device summary

Order code

Marking

Package

Packing

STP12N65M2

12N65M2

TO-220

Tube

November 2017

DocID031324 Rev 1

1/13

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...13

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