是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | TO-220AB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | 风险等级: | 5.84 |
其他特性: | AVALANCHE RATED | 雪崩能效等级(Eas): | 350 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 600 V |
最大漏极电流 (ID): | 11 A | 最大漏源导通电阻: | 0.45 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 44 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | MATTE TIN | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STP11NM60ZFP | STMICROELECTRONICS |
获取价格 |
11A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220FP, 3 PI | |
STP11NM65N | STMICROELECTRONICS |
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N-channel 650 V, 0.425 Ω typ., 11 A MDmeshâ | |
STP11NM80 | STMICROELECTRONICS |
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N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh?Power MOSFET | |
STP11NM80_10 | STMICROELECTRONICS |
获取价格 |
N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power M | |
STP-1200-2115 | BEL |
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Power in the Round 100 VA to 2000 VA | |
STP120N4F6 | STMICROELECTRONICS |
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N沟道40 V、3.8 mOhm、80 A STripFET(TM) VI DeepGAT | |
STP120NF04 | STMICROELECTRONICS |
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N-channel 40V - 0.0047ohm - 120A TO-220 STripFET II MOSFET | |
STP120NF04_06 | STMICROELECTRONICS |
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N-channel 40V - 0.0047ohm - 120A TO-220 STripFET II MOSFET | |
STP120NF10 | STMICROELECTRONICS |
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N-CHANNEL 100V - 0.009 W - 120A DPAK/TO-220 STripFET II POWER MOSFET | |
STP120NH03L | STMICROELECTRONICS |
获取价格 |
N-channel 30V - 0.005ohm - 60A - TO-220 / D2PAK / I2PAK STripFET Power MOSFET for DC-DC co |