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STGB10NB60S

更新时间: 2024-01-14 09:33:08
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管电动机控制双极性晶体管
页数 文件大小 规格书
13页 392K
描述
N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT

STGB10NB60S 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:D2PAK
包装说明:TO-263, D2PAK-3针数:4
Reach Compliance Code:not_compliant风险等级:5.24
Is Samacsys:N最大集电极电流 (IC):20 A
集电极-发射极最大电压:600 V配置:SINGLE
门极发射器阈值电压最大值:5 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):245极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):80 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:MOTOR CONTROL晶体管元件材料:SILICON
标称接通时间 (ton):1160 nsBase Number Matches:1

STGB10NB60S 数据手册

 浏览型号STGB10NB60S的Datasheet PDF文件第1页浏览型号STGB10NB60S的Datasheet PDF文件第2页浏览型号STGB10NB60S的Datasheet PDF文件第4页浏览型号STGB10NB60S的Datasheet PDF文件第5页浏览型号STGB10NB60S的Datasheet PDF文件第6页浏览型号STGB10NB60S的Datasheet PDF文件第7页 
STGP10NB60S - STGP10NB60SFP - STGB10NB60S  
ELECTRICAL CHARACTERISTICS (CONTINUED)  
Table 7: Dynamic  
Symbol  
Parameter  
Forward Transconductance  
Input Capacitance  
Test Conditions  
Min.  
Typ.  
7
Max.  
Unit  
S
g
fs  
(1)  
V
V
= 25 V I = 10 A  
CE  
, C  
C
C
= 25 V, f= 1 MHz, V = 0  
610  
65  
pF  
pF  
pF  
ies  
CE  
GE  
Output Capacitance  
oes  
C
Reverse Transfer  
Capacitance  
12  
res  
Q
Total Gate Charge  
V
V
= 400 V, I = 10 A,  
= 15 V  
33  
nC  
A
g
CE  
C
GE  
(see Figure 20)  
I
CL  
Latching Current  
V
= 480 V , Tj = 150°C  
20  
clamp  
R
= 1 kΩ  
G
Table 8: Switching On  
Symbol  
Parameter  
Test Conditions  
= 480 V, I = 10 A R =1KΩ  
= 15 V  
Min.  
Typ.  
Max.  
Unit  
t
Turn-on Delay Time  
Current Rise Time  
V
V
0.7  
0.46  
µs  
µs  
d(on)  
CC  
C
G
t
r
GE  
(see Figure 18)  
(di/dt)  
Eon (1)  
Turn-on Current Slope  
Turn-on Switching Losses  
V
V
= 480 V, I = 10 A R =1KΩ  
8
0.6  
A/µs  
mJ  
on  
CC  
C
G
=15 V,Tj = 125°C  
GE  
Table 9: Switching Off  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
2.2  
1.2  
1.2  
5.0  
3.8  
1.2  
1.9  
8.0  
Max.  
Unit  
µs  
t
V
R
= 480 V, I = 10 A,  
Cross-Over Time  
c
cc  
C
= 10 , V = 15 V  
GE  
T = 25 °C  
(see Figure 18)  
G
t (V  
)
off  
Off Voltage Rise Time  
Current Fall Time  
µs  
r
J
t
f
µs  
E
(**)  
Turn-off Switching Loss  
Cross-Over Time  
mJ  
µs  
off  
t
c
V
R
= 480 V, I = 10 A,  
cc C  
= 10 , V = 15 V  
GE  
T = 125 °C  
(see Figure 18)  
G
t (V  
)
off  
Off Voltage Rise Time  
Current Fall Time  
µs  
r
J
t
f
µs  
E
(**)  
Turn-off Switching Loss  
mJ  
off  
(1)Pulse width limited by max. junction temperature.  
(**)Losses Include Also the Tail ( Jedec Standardization)  
3/13  

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