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STF10NM60ND PDF预览

STF10NM60ND

更新时间: 2024-09-28 20:52:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 局域网开关脉冲晶体管
页数 文件大小 规格书
50页 1238K
描述
N-channel 600 V, 0.57 Ohm, 8 A, TO-220FP FDmesh(TM) II Power MOSFET

STF10NM60ND 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:16 weeks
风险等级:1.53雪崩能效等级(Eas):130 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):8 A
最大漏极电流 (ID):8 A最大漏源导通电阻:0.6 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):25 W
最大脉冲漏极电流 (IDM):32 A子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn) - annealed
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STF10NM60ND 数据手册

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STF10NM60ND 替代型号

型号 品牌 替代类型 描述 数据表
STF19NM50N STMICROELECTRONICS

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N-channel 500 V, 0.2 ohm, 14 A MDmesh II Power MOSFET in TO-220FP, TO-220 and TO-247
STF10NM60N STMICROELECTRONICS

类似代替

N-channel 600 V, 0.53 ohm, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET

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