Datasheet > STF11N60DM2

STF11N60DM2

更新时间： 2023-12-20 18:44:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	452K
描述
N沟道600 V、0.370 Ohm典型值、10 A MDmesh DM2功率MOSFET，TO-220FP封装

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STF11N60DM2 数据手册

STF11N60DM2

Datasheet

N-channel 600 V, 370 mΩ typ., 10 A MDmesh DM2 Power MOSFET in a

TO-220FP package

@ T

R max.

DS(on)

TOT

Order code

Jmax

STF11N60DM2

650 V

420 mΩ

10 A

25 W

•

Fast-recovery body diode

Extremely low gate charge and input capacitance

Low on-resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

TO-220FP

D(2)

Applications

•

Switching applications

G(1)

Description

S(3)

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-

recovery diode series. It offers very low recovery charge (Q_rr) and time (t_rr) combined

with low R_DS(on), rendering it suitable for the most demanding high-efficiency

converters and ideal for bridge topologies and ZVS phase-shift converters.

NG1D2S3Z

Product status

STF11N60DM2

Product summary

Order code

Marking

STF11N60DM2

11N60DM2

TO220FP

Tube

Package

Packing

DS11673 - Rev 2 - November 2019

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...12

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