5秒后页面跳转
STF12A60 PDF预览

STF12A60

更新时间: 2024-09-28 03:30:51
品牌 Logo 应用领域
SEMIWELL /
页数 文件大小 规格书
6页 729K
描述
Bi-Directional Triode Thyristor

STF12A60 数据手册

 浏览型号STF12A60的Datasheet PDF文件第2页浏览型号STF12A60的Datasheet PDF文件第3页浏览型号STF12A60的Datasheet PDF文件第4页浏览型号STF12A60的Datasheet PDF文件第5页浏览型号STF12A60的Datasheet PDF文件第6页 
SemiWell Semiconductor  
STF12A60  
UL : E228720  
Bi-Directional Triode Thyristor  
Symbol  
2.T2  
Features  
▼▲  
Repetitive Peak Off-State Voltage : 600V  
3.Gate  
R.M.S On-State Current ( I  
= 12 A )  
T(RMS)  
High Commutation dv/dt  
1.T1  
Isolation Voltage ( V  
= 1500V AC )  
ISO  
TO-220F  
General Description  
This device is fully isolated package suitable for AC switching  
application, phase control application such as fan speed and  
temperature modulation control, lighting control and static  
switching relay.  
This device is approved to comply with applicable require-  
ments by Underwriters Laboratories Inc.  
1
2
3
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )  
Symbol  
VDRM  
Parameter  
Repetitive Peak Off-State Voltage  
R.M.S On-State Current  
Condition  
Ratings  
600  
Units  
V
A
TC = 79 °C  
IT(RMS)  
12  
One Cycle, 50Hz/60Hz, Peak,  
Non-Repetitive  
ITSM  
Surge On-State Current  
119/130  
A
I2t  
PGM  
PG(AV)  
IGM  
71  
5.0  
I2t  
A2s  
W
W
A
Peak Gate Power Dissipation  
Average Gate Power Dissipation  
Peak Gate Current  
0.5  
2.0  
VGM  
VISO  
TJ  
Peak Gate Voltage  
10  
V
Isolation Breakdown Voltage(R.M.S.)  
Operating Junction Temperature  
Storage Temperature  
Mass  
A.C. 1 minute  
1500  
- 40 ~ 125  
- 40 ~ 150  
2.0  
V
°C  
°C  
g
TSTG  
Aug, 2003. Rev. 2  
1/6  
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.  

与STF12A60相关器件

型号 品牌 获取价格 描述 数据表
STF12A80 SEMIWELL

获取价格

Bi-Directional Triode Thyristor
STF12N120K5 STMICROELECTRONICS

获取价格

N沟道1200 V、0.62 Ohm典型值、12 A MDmesh K5功率MOSFET,
STF12N50DM2 STMICROELECTRONICS

获取价格

N沟道500 V、0.299 Ohm典型值、11 A MDmesh DM2功率MOSFET
STF12N50M2 STMICROELECTRONICS

获取价格

N沟道500 V、0.325 Ohm典型值、10 A MDmesh M2功率MOSFET,
STF12N60M2 STMICROELECTRONICS

获取价格

N沟道600 V、0.395 Ohm典型值、9 A MDmesh M2功率MOSFET,T
STF12N65M2 STMICROELECTRONICS

获取价格

N沟道650 V、0.42 Ohm典型值、8 A MDmesh M2功率MOSFET,TO
STF12N65M5 STMICROELECTRONICS

获取价格

N-channel 650 V, 0.39 Ohm, 8.5 A MDmesh V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK
STF12NK60Z STMICROELECTRONICS

获取价格

N-channel 650 V @Tjmax, 0.53 Ω, 10 A TO-220,
STF12NM50N STMICROELECTRONICS

获取价格

N-channel 500V - 0.29ヘ - 11A - TO-220 /FP- D2
STF12NM50ND STMICROELECTRONICS

获取价格

N-channel 500V, 0.29 OHM, 11A, FDmesh II Power MOSFET (with fast diode) in D2PAK, DPAK, TO