Datasheet > STF14N80K5

STF14N80K5

更新时间： 2024-11-17 14:57:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
16页	761K
描述
N沟道800 V、0.400 Ohm典型值、12 A MDmesh K5功率MOSFET，TO-220FP封装

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STF14N80K5 数据手册

STF14N80K5,

STFI14N80K5

N-channel 800 V, 0.400 Ω typ., 12 A MDmesh™ K5

Power MOSFETs in TO-220FP and I²PAKFP packages

Datasheet - production data

Features

Order code

STF14N80K5

STFI14N80K5

V_DS

R_DS(on)max.

I_D

800 V

0.445 Ω

12 A

TO-220FP

I PAKFP (TO-281)



Industry’s lowest R_DS(on)x area

Industry’s best figure of merit (FoM)

Ultra-low gate charge

100% avalanche tested

Zener-protected

Figure 1: Internal schematic diagram

D(2)

Applications



Switching applications

G(1)

Description

These very high voltage N-channel Power

MOSFET are designed using MDmesh™ K5

technology based on an innovative proprietary

vertical structure. The result is a dramatic

reduction in on-resistance and ultra-low gate

charge for applications requiring superior power

density and high efficiency.

S(3)

AM15572v1_no_tab

Table 1: Device summary

Marking Package

Order code

STF14N80K5

STFI14N80K5

Packing

TO-220FP

14N80K5

Tube

I²PAKFP (TO-281)

December 2015

DocID027725 Rev 2

1/16

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...16

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