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STF14NM50N PDF预览

STF14NM50N

更新时间: 2024-11-16 12:47:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
26页 1311K
描述
N-channel 500 V, 0.28 Ω typ., 12 A MDmesh™ II Power MOSFET in D²PAK, DPAK, TO-220FP, I²PAK and TO-220 packages

STF14NM50N 技术参数

生命周期:Active零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:16 weeks风险等级:2.19
Samacsys Description:STF14NM50N N-Channel MOSFET, 12 A, 500 V MDmesh, 3-Pin TO-220FP STMicroelectronics雪崩能效等级(Eas):18 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (Abs) (ID):12 A
最大漏极电流 (ID):12 A最大漏源导通电阻:0.32 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):25 W
最大脉冲漏极电流 (IDM):48 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn) - annealed端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON

STF14NM50N 数据手册

 浏览型号STF14NM50N的Datasheet PDF文件第2页浏览型号STF14NM50N的Datasheet PDF文件第3页浏览型号STF14NM50N的Datasheet PDF文件第4页浏览型号STF14NM50N的Datasheet PDF文件第5页浏览型号STF14NM50N的Datasheet PDF文件第6页浏览型号STF14NM50N的Datasheet PDF文件第7页 
STB14NM50N, STD14NM50N,  
STF14NM50N, STI14NM50N, STP14NM50N  
N-channel 500 V, 0.28 Ω typ., 12 A MDmesh™ II Power MOSFET  
in D²PAK, DPAK, TO-220FP, I²PAK and TO-220 packages  
Datasheet production data  
Features  
TAB  
VDS  
TJmax  
@
RDS(on)  
max  
TAB  
Order codes  
ID  
3
1
3
D2PAK  
3
1
STB14NM50N  
STD14NM50N  
STF14NM50N  
STI14NM50N  
STP14NM50N  
2
1
DPAK  
TO-220FP  
TAB  
550 V  
0.32 Ω  
12 A  
TAB  
100% avalanche tested  
I2PAK  
3
3
2
2
1
TO-220  
1
Low input capacitance and gate charge  
Low gate input resistance  
Applications  
Figure 1.  
Internal schematic diagram  
Switching applications  
$ꢅꢆꢇ 4!"ꢈ  
Description  
These devices are N-channel Power MOSFET  
developed using the second generation of  
MDmesh™ technology. This revolutionary Power  
MOSFET associates a vertical structure to the  
company’s strip layout to yield one of the world’s  
lowest on-resistance and gate charge. It is  
therefore suitable for the most demanding high  
efficiency converters.  
'ꢅꢁꢈ  
3ꢅꢉꢈ  
!-ꢀꢁꢂꢃꢄVꢁ  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STB14NM50N  
STD14NM50N  
STF14NM50N  
STI14NM50N  
STP14NM50N  
D2PAK  
DPAK  
Tape and reel  
Tube  
14NM50N  
TO-220FP  
I2PAK  
TO-220  
February 2013  
Doc ID 16832 Rev 6  
1/26  
This is information on a product in full production.  
www.st.com  
26  
 
 

STF14NM50N 替代型号

型号 品牌 替代类型 描述 数据表
STF5N95K3 STMICROELECTRONICS

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STF10N65K3 STMICROELECTRONICS

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N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3 Power MOSFET in TO-220FP,

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