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STF10N65K3 PDF预览

STF10N65K3

更新时间: 2024-09-27 12:27:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
17页 958K
描述
N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3 Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages

STF10N65K3 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:12 weeks
风险等级:1.71Is Samacsys:N
雪崩能效等级(Eas):212 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:650 V
最大漏极电流 (Abs) (ID):10 A最大漏极电流 (ID):11 A
最大漏源导通电阻:0.85 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):35 W最大脉冲漏极电流 (IDM):40 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn) - annealed
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STF10N65K3 数据手册

 浏览型号STF10N65K3的Datasheet PDF文件第2页浏览型号STF10N65K3的Datasheet PDF文件第3页浏览型号STF10N65K3的Datasheet PDF文件第4页浏览型号STF10N65K3的Datasheet PDF文件第5页浏览型号STF10N65K3的Datasheet PDF文件第6页浏览型号STF10N65K3的Datasheet PDF文件第7页 
STF10N65K3, STFI10N65K3,  
STP10N65K3  
N-channel 650 V, 0.75 Ω typ., 10 A Zener-protected SuperMESH3™  
2
Power MOSFET in TO-220FP, I PAKFP and TO-220 packages  
Datasheet production data  
Features  
RDS(on)  
max  
Order codes  
VDS  
ID  
PTOT  
3
2
STF10N65K3  
1
35 W  
STFI10N65K3 650 V  
STP10N65K3  
1 Ω  
10 A  
TO-220FP  
I2PAKFP  
150 W  
TAB  
100% avalanche tested  
Extremely high dv/dt capability  
Gate charge minimized  
3
2
1
Very low intrinsic capacitances  
TO-220  
Improved diode reverse recovery  
characteristics  
Figure 1.  
Internal schematic diagram  
Zener-protected  
'ꢀꢁꢂꢃ7$%ꢄ  
Applications  
Switching applications  
Description  
*ꢀꢅꢄ  
These SuperMESH3™ Power MOSFETs are the  
result of improvements applied to  
STMicroelectronics’ SuperMESH™ technology,  
combined with a new optimized vertical structure.  
These devices boast an extremely low on-  
resistance, superior dynamic performance and  
high avalanche capability, rendering them suitable  
for the most demanding applications.  
6ꢀꢆꢄ  
AM01476v1  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STF10N65K3  
STFI10N65K3  
STP10N65K3  
TO-220FP  
I2PAKFP  
TO-220  
10N65K3  
Tube  
November 2012  
Doc ID 15732 Rev 3  
1/17  
This is information on a product in full production.  
www.st.com  
17  

STF10N65K3 替代型号

型号 品牌 替代类型 描述 数据表
STF5N95K3 STMICROELECTRONICS

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STF21N65M5 STMICROELECTRONICS

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N-channel 650 V, 0.150 Ω, 17 A MDmesh™ V P

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