Datasheet > STF12N120K5

STF12N120K5

更新时间： 2024-09-29 14:57:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
16页	407K
描述
N沟道1200 V、0.62 Ohm典型值、12 A MDmesh K5功率MOSFET，TO-220FP封装

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技术参数
数据手册

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STF12N120K5 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	17 weeks
风险等级：	1.53	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

STF12N120K5 数据手册

STF12N120K5,

STFW12N120K5

N-channel 1200 V, 0.62 Ω typ., 12 A MDmesh™ K5

Power MOSFETs in TO-220FP and TO-3PF packages

Datasheet production data

Features

Order code

V_DS

R_DS(on)max.

I_DP_TOT

STF12N120K5

40 W

1200 V

0.69 Ω

12 A

STFW12N120K5

63 W

ꢀ

• Industry’s lowest R_DS(on)x area

• Industry’s best figure of merit (FoM)

• Ultra low gate charge

ꢂ

ꢁ

ꢀ

ꢁ

ꢀ

TO-220FP

TO-3PF

• 100% avalanche tested

• Zener-protected

Applications

Figure 1. Internal schematic diagram

• Switching applications

'ꢃꢁꢄ

Description

These very high voltage N-channel Power

MOSFETs are designed using MDmesh™ K5

technology based on an innovative proprietary

vertical structure. The result is a dramatic

reduction in on-resistance and ultra-low gate

charge for applications requiring superior power

density and high efficiency.

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$0ꢀꢅꢅꢅꢆYꢁ

Table 1. Device summary

Order code

Marking

Packages

Packing

STF12N120K5

TO-220FP

TO-3PF

12N120K5

Tube

STFW12N120K5

May 2015

DocID026396 Rev 2

1/16

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...16

中文翻译

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