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STF12N120K5 PDF预览

STF12N120K5

更新时间: 2024-11-24 14:57:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
16页 407K
描述
N沟道1200 V、0.62 Ohm典型值、12 A MDmesh K5功率MOSFET,TO-220FP封装

STF12N120K5 技术参数

生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:17 weeks
风险等级:1.53峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

STF12N120K5 数据手册

 浏览型号STF12N120K5的Datasheet PDF文件第2页浏览型号STF12N120K5的Datasheet PDF文件第3页浏览型号STF12N120K5的Datasheet PDF文件第4页浏览型号STF12N120K5的Datasheet PDF文件第5页浏览型号STF12N120K5的Datasheet PDF文件第6页浏览型号STF12N120K5的Datasheet PDF文件第7页 
STF12N120K5,  
STFW12N120K5  
N-channel 1200 V, 0.62 Ω typ., 12 A MDmesh™ K5  
Power MOSFETs in TO-220FP and TO-3PF packages  
Datasheet production data  
-
Features  
Order code  
VDS  
RDS(on) max.  
ID PTOT  
STF12N120K5  
40 W  
1200 V  
0.69  
12 A  
STFW12N120K5  
63 W  
Industry’s lowest RDS(on) x area  
Industry’s best figure of merit (FoM)  
Ultra low gate charge  
TO-220FP  
TO-3PF  
100% avalanche tested  
Zener-protected  
Applications  
Figure 1. Internal schematic diagram  
Switching applications  
'ꢃꢁꢄ  
Description  
These very high voltage N-channel Power  
MOSFETs are designed using MDmesh™ K5  
technology based on an innovative proprietary  
vertical structure. The result is a dramatic  
reduction in on-resistance and ultra-low gate  
charge for applications requiring superior power  
density and high efficiency.  
*ꢃꢀꢄ  
6ꢃꢂꢄ  
$0ꢀꢅꢅꢅꢆYꢁ  
Table 1. Device summary  
Order code  
Marking  
Packages  
Packing  
STF12N120K5  
TO-220FP  
TO-3PF  
12N120K5  
Tube  
STFW12N120K5  
May 2015  
DocID026396 Rev 2  
1/16  
This is information on a product in full production.  
www.st.com  

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