Datasheet > STF12N65M2

STF12N65M2

更新时间： 2024-11-24 14:57:47

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意法半导体 - STMICROELECTRONICS		/
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13页	626K
描述
N沟道650 V、0.42 Ohm典型值、8 A MDmesh M2功率MOSFET，TO-220FP封装

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STF12N65M2 数据手册

STF12N65M2

N-channel 650 V, 0.42 Ω typ., 8 A MDmesh™ M2

Power MOSFET in a TO-220FP package

Datasheet - production data

Features

Order code

V_DS

R_DS(on)max.

I_D

STF12N65M2

650 V

0.50 Ω

8 A



Extremely low gate charge

Excellent output capacitance (C_OSS) profile

100% avalanche tested

Zener-protected

Applications

TO-220FP



Switching applications

Figure 1: Internal schematic diagram

Description

D(2)

This device is an N-channel Power MOSFET

developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical

structure, the device exhibits low on-resistance

and optimized switching characteristics,

rendering it suitable for the most demanding high

efficiency converters.

G(1)

S(3)

AM15572v1_no_tab

Table 1: Device summary

Order code

Marking

Package

Packing

STF12N65M2

12N65M2

TO-220FP

Tube

June 2017

DocID027318 Rev 3

1/13

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...13

中文翻译

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STF12N65M2 替代型号

型号	品牌	替代类型	描述	数据表
TK8A60W	TOSHIBA	功能相似	N-ch MOSFET, 600 V, 0.5 Ω@10V, TO-220SIS, DTM

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