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STF12PF06 PDF预览

STF12PF06

更新时间: 2024-11-15 22:21:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
10页 265K
描述
P-CHANNEL 60V - 0.18 ohm - 12A TO-220/TO-220FP STripFET II POWER MOSFET

STF12PF06 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220FP, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.82
Is Samacsys:N雪崩能效等级(Eas):200 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):8 A
最大漏极电流 (ID):8 A最大漏源导通电阻:0.2 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):225 W
最大脉冲漏极电流 (IDM):32 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STF12PF06 数据手册

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STP12PF06  
STF12PF06  
P-CHANNEL 60V - 0.18 - 12A TO-220/TO-220FP  
STripFET™ II POWER MOSFET  
Table 1: General Features  
Figure 1:Package  
V
R
I
D
TYPE  
DSS  
DS(on)  
STP12PF06  
STF12PF06  
60 V  
60 V  
< 0.20 Ω  
< 0.20 Ω  
12 A  
12 A  
TYPICAL RDS(on) = 0.18 Ω  
EXCEPTIONAL dv/dt CAPABILITY  
100% AVALANCHE TESTED  
LOW GATE CHARGE  
3
3
2
2
1
1
APPLICATION ORIENTED  
CHARACTERIZATION  
TO-220  
TO-220FP  
DESCRIPTION  
This Power MOSFET is the latest development of  
STMicroelectronis unique "Single Feature Size™"  
strip-based process. The resulting transistor  
shows extremely high packing density for low on-  
resistance, rugged avalanche characteristics and  
Figure 2: Internal Schematic Diagram  
less critical alignment steps therefore  
remarkable manufacturing reproducibility  
a
APPLICATIONS  
MOTOR CONTROL  
DC-DC & DC-AC CONVERTERS  
Table 2: Order Codes  
PART NUMBER  
STP12PF06  
MARKING  
P12PF06  
F12PF06  
PACKAGE  
TO-220  
TO-220FP  
PACKAGING  
TUBE  
STF12PF06  
TUBE  
Table 3: ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
STP20PF06  
STF20PF06  
V
Drain-source Voltage (V = 0)  
60  
60  
V
V
DS  
GS  
V
DGR  
Drain-gate Voltage (R = 20 k)  
GS  
V
Gate- source Voltage  
± 20  
V
GS  
I
I
Drain Current (continuous) at T = 25°C  
12  
8.4  
48  
8
5.6  
32  
A
A
A
D
C
Drain Current (continuous) at T = 100°C  
D
C
I
()  
Drain Current (pulsed)  
DM  
P
Total Dissipation at T = 25°C  
Derating Factor  
Peak Diode Recovery voltage slope  
Single Pulse Avalanche Energy  
Storage Temperature  
60  
0.4  
225  
0.17  
W
tot  
C
W/°C  
V/ns  
mJ  
(1)  
6
200  
dv/dt  
(2)  
E
AS  
T
stg  
-55 to 175  
°C  
T
Operating Junction Temperature  
j
() Pulse width limited by safe operating area.  
NOTE:For the P-CHANNEL MOSFET actual polarity of voltages  
and current has to be reversed.  
(1) I 12A, di/dt 200A/µs, V V  
, T T  
(BR)DSS j JMAX  
SD  
DD  
o
(2) Starting T = 25 C, I = 12A, V = 25V  
j
D
DD  
Rev. 2.0  
March 2005  
1/10  

STF12PF06 替代型号

型号 品牌 替代类型 描述 数据表
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