Datasheet > STF13N60M2

STF13N60M2

更新时间： 2024-10-01 14:57:43

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意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
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描述
N沟道600 V、0.35 Ohm典型值、11 A MDmesh M2功率MOSFET，TO-220FP封装

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中文翻译

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技术参数
数据手册

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STF13N60M2 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	1.68
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

STF13N60M2 数据手册

STF13N60M2, STFI13N60M2

N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Q_g

Power MOSFETs in TO-220FP and I²PAKFP packages

Datasheet

−

production data

Features

Order codes V_DS@ T_JmaxR_DS(on)max

I_D

STF13N60M2

650 V

0.38 Ω

11 A

STFI13N60M2

• Extremely low gate charge

TO-220FP

• Lower R_DS(on)x area vs previous generation

• Low gate input resistance

• 100% avalanche tested

I²PAKFP

(TO-281)

• Zener-protected

Applications

Figure 1. Internal schematic diagram

• Switching applications

Description

These devices are N-channel Power MOSFETs

developed using a new generation of MDmesh™

technology: MDmesh II Plus™ low Q_g. These

revolutionary Power MOSFETs associate a

vertical structure to the company's strip layout to

yield one of the world's lowest on-resistance and

gate charge. They are therefore suitable for the

most demanding high efficiency converters.

AM15572v1

Table 1. Device summary

Order codes

Marking

Package

Packaging

STF13N60M2

STFI13N60M2

TO-220FP

13N60M2

Tube

I²PAKFP (TO-281)

March 2014

DocID023939 Rev 4

1/14

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...14

中文翻译

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