Datasheet > STF12N50M2

STF12N50M2

更新时间： 2024-09-29 14:57:31

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	660K
描述
N沟道500 V、0.325 Ohm典型值、10 A MDmesh M2功率MOSFET，TO-220FP封装

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技术参数
数据手册

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STF12N50M2 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	16 weeks
风险等级：	1.54	配置：	Single
最大漏极电流 (Abs) (ID)：	10 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最高工作温度：	150 °C	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	85 W
子类别：	FET General Purpose Power	表面贴装：	NO
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

STF12N50M2 数据手册

STF12N50M2

N-channel 500 V, 0.325 Ω typ.,10 A MDmesh II Plus™ low Q_g

Power MOSFET in a TO-220FP package

Datasheet

preliminary data

Features

Order code

V_DS

R_DS(on)max

I_D

STF12N50M2

500 V

0.38 Ω

10 A

• Extremely low gate charge

• Lower R_DS(on)x area vs previous generation

• Low gate input resistance

• 100% avalanche tested

TO-220FP

• Zener-protected

Applications

• Switching applications

Figure 1. Internal schematic diagram

Description

This device is an N-channel Power MOSFET

developed using a new generation of MDmesh™

technology: MDmesh II Plus™ low Q_g. This

revolutionary Power MOSFET associates a

vertical structure to the company's strip layout to

yield one of the world's lowest on-resistance and

gate charge. It is therefore suitable for the most

demanding high efficiency converters.

AM15572v1

Table 1. Device summary

Order code

Marking

12N50M2

Package

Packaging

STF12N50M2

TO-220FP

Tube

June 2014

DocID026515 Rev 1

1/13

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

www.st.com

12 3 4 5 6 7...13

中文翻译

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