Datasheet > STF12N60M2

STF12N60M2

更新时间： 2024-11-24 14:58:11

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意法半导体 - STMICROELECTRONICS		/
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描述
N沟道600 V、0.395 Ohm典型值、9 A MDmesh M2功率MOSFET，TO-220FP封装

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STF12N60M2 数据手册

STF12N60M2

N-channel 600 V, 0.395 Ω typ., 9 A MDmesh™ M2

Power MOSFET in a TO-220FP package

Datasheet - production data

Features

Order code

V_DS

R_DS(on)max.

I_D

P_TOT

STF12N60M2

600 V

0.450 Ω

9 A 25 W

•

Extremely low gate charge

Excellent output capacitance (C_OSS) profile

100% avalanche tested

Zener-protected

Applications

TO-220FP

•

Switching applications

Figure 1: Internal schematic diagram

Description

D(2)

This device is an N-channel Power MOSFET

developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical

structure, the device exhibits low on-resistance

and optimized switching characteristics,

rendering it suitable for the most demanding high

efficiency converters.

G(1)

S(3)

AM15572v1_no_tab

Table 1: Device summary

Order code

Marking

Package

Packing

STF12N60M2

12N60M2

TO-220FP

Tube

May 2015

DocID027908 Rev 1

1/13

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...13

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