Datasheet > STF11N65M2

STF11N65M2

更新时间： 2023-12-20 18:45:38

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	450K
描述
N沟道650 V、0.60 Ohm典型值、7 A MDmesh M2功率MOSFET，TO-220FP封装

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STF11N65M2 数据手册

STF11N65M2

Datasheet

N-channel 650 V, 0.60 Ω typ., 7 A MDmesh M2 Power MOSFET

in a TO-220FP package

Features

DS(on)

max.

TOT

Order code

STF11N65M2

650 V

0.68 Ω

7 A

25 W

•

Extremely low gate charge

Excellent output capacitance (C_OSS) profile

100% avalanche tested

Zener-protected

TO-220FP

D(2)

Applications

•

Switching applications

G(1)

Description

This device is an N-channel Power MOSFET developed using MDmesh M2

technology. Thanks to its strip layout and an improved vertical structure, the device

exhibits low on-resistance and optimized switching characteristics, rendering it

suitable for the most demanding high efficiency converters.

S(3)

NG1D2S3Z

Product status link

STF11N65M2

Product summary

Order code

Marking

STF11N65M2

11N65M2

TO-220FP

Tube

Package

Packing

DS10136 - Rev 3 - June 2019

www.st.com

For further information contact your local STMicroelectronics sales office.

12 3 4 5 6 7...12

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