5秒后页面跳转
STF11NM65N PDF预览

STF11NM65N

更新时间: 2024-11-23 12:47:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
21页 1263K
描述
N-channel 650 V, 0.425 Ω typ., 11 A MDmesh™II Power MOSFET in DPAK, TO-220FP, I²PAKFP and TO-220 packages

STF11NM65N 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:16 weeks
风险等级:5.72Is Samacsys:N
雪崩能效等级(Eas):300 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:650 V
最大漏极电流 (Abs) (ID):12 A最大漏极电流 (ID):12 A
最大漏源导通电阻:0.38 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):30 W最大脉冲漏极电流 (IDM):48 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STF11NM65N 数据手册

 浏览型号STF11NM65N的Datasheet PDF文件第2页浏览型号STF11NM65N的Datasheet PDF文件第3页浏览型号STF11NM65N的Datasheet PDF文件第4页浏览型号STF11NM65N的Datasheet PDF文件第5页浏览型号STF11NM65N的Datasheet PDF文件第6页浏览型号STF11NM65N的Datasheet PDF文件第7页 
STD11NM65N, STF11NM65N,  
STFI11NM65N, STP11NM65N  
N-channel 650 V, 0.425 Ω typ., 11 A MDmesh™II Power MOSFET  
in DPAK, TO-220FP, I²PAKFP and TO-220 packages  
Datasheet  
-
production data  
Features  
TAB  
VDSS  
TJmax  
@
RDS(on)  
max  
3
Order codes  
ID  
1
3
2
DPAK  
1
STD11NM65N  
STF11NM65N  
STFI11NM65N  
STP11NM65N  
TO-220FP  
710 V  
< 0.455 Ω  
11 A  
TAB  
100% avalanche tested  
3
1
2
2
1
3
Low input capacitance and gate charge  
low gate input resistance  
TO-220  
I²PAKFP  
Figure 1. Internal schematic diagram  
Applications  
Switching applications  
'ꢅꢆꢇĆ7$%ꢈ  
Description  
These devices are N-channel Power MOSFETs  
developed using the second generation of  
MDmesh™ technology. This revolutionary Power  
MOSFET associates a vertical structure to the  
company’s strip layout to yield one of the world’s  
lowest on-resistance and gate charge. It is  
therefore suitable for the most demanding high  
efficiency converters.  
*ꢅꢁꢈ  
6ꢅꢉꢈ  
$0ꢀꢁꢂꢃꢄYꢁ  
Table 1. Device summary  
Order codes  
Marking  
Packages  
Packaging  
STD11NM65N  
STF11NM65N  
STFI11NM65N  
STP11NM65N  
DPAK  
TO-220FP  
I²PAKFP  
TO-220  
Tape and reel  
11NM65N  
Tube  
July 2013  
Doc ID 13476 Rev 4  
1/21  
This is information on a product in full production.  
www.st.com  
 

STF11NM65N 替代型号

型号 品牌 替代类型 描述 数据表
STF14NM65N STMICROELECTRONICS

类似代替

N-channel 650 V, 0.33 Ω, 12 A MDmesh™ II Powe

与STF11NM65N相关器件

型号 品牌 获取价格 描述 数据表
STF11NM80 STMICROELECTRONICS

获取价格

N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh?Power MOSFET
STF-120HV PREMO

获取价格

Three Phase+Neutral Filters For Solar Technology Applications
STF12A60 WINSEMI

获取价格

Bi-Directional Triode Thyristor
STF12A60 SEMIWELL

获取价格

Bi-Directional Triode Thyristor
STF12A80 SEMIWELL

获取价格

Bi-Directional Triode Thyristor
STF12N120K5 STMICROELECTRONICS

获取价格

N沟道1200 V、0.62 Ohm典型值、12 A MDmesh K5功率MOSFET,
STF12N50DM2 STMICROELECTRONICS

获取价格

N沟道500 V、0.299 Ohm典型值、11 A MDmesh DM2功率MOSFET
STF12N50M2 STMICROELECTRONICS

获取价格

N沟道500 V、0.325 Ohm典型值、10 A MDmesh M2功率MOSFET,
STF12N60M2 STMICROELECTRONICS

获取价格

N沟道600 V、0.395 Ohm典型值、9 A MDmesh M2功率MOSFET,T
STF12N65M2 STMICROELECTRONICS

获取价格

N沟道650 V、0.42 Ohm典型值、8 A MDmesh M2功率MOSFET,TO