Datasheet > STD60N3LH5_09

STD60N3LH5_09

更新时间： 2024-09-28 06:14:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
16页	388K
描述
N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, TO-220 STripFET™ V Power MOSFET

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中文翻译

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数据手册

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STD60N3LH5_09 数据手册

STD60N3LH5

STP60N3LH5, STU60N3LH5

N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, TO-220

STripFET™ V Power MOSFET

Features

Type

V_DSS

R_DS(on)max

I_D

STD60N3LH5

STP60N3LH5

STU60N3LH5

30 V

0.008 Ω

0.0084 Ω

48 A

TO-220

■ R

* Q industry benchmark

DS(on)

■ Extremely low on-resistance R

DS(on)

■ Very low switching gate charge

■ High avalanche ruggedness

■ Low gate drive power losses

DPAK

IPAK

Application

Figure 1.

Internal schematic diagram

■ Switching applications

Description

This STripFET™V Power MOSFET technology is

among the latest improvements, which have been

especially tailored to achieve very low on-state

resistance providing also one of the best-in-class

FOM.

Table 1.

Device summary

Order codes

Marking

Package

DPAK

Packaging

STD60N3LH5

STP60N3LH5

STU60N3LH5

60N3LH5

Tape and reel

Tube

TO-220

IPAK

Tube

April 2009

Doc ID 14079 Rev 3

1/16

www.st.com

12 3 4 5 6 7...16

中文翻译

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