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STD60NF55L PDF预览

STD60NF55L

更新时间: 2024-09-27 22:29:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
9页 457K
描述
N-CHANNEL 55V - 0.012ohm - 60A DPAK STripFET⑩ II POWER MOSFET

STD60NF55L 数据手册

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STD60NF55L  
N-CHANNEL 55V - 0.012- 60A DPAK  
STripFET™ II POWER MOSFET  
TYPE  
V
DSS  
R
I
D
DS(on)  
STD60NF55L  
55V  
< 0.015Ω  
60A  
TYPICAL R  
= 0.012Ω  
DS(on)  
LOW THRESHOLD DRIVE  
ADD SUFFIX “T4” FOR ORDERING IN TAPE &  
REEL  
3
1
DPAK  
TO-252  
DESCRIPTION  
This Power Mosfet is the latest development of  
STMicroelectronics unique “Single Feature  
Size™” strip-based process. The resulting tran-  
sistor shows extremely high packing density for  
low on-resistance, rugged avalance characteris-  
tics and less critical alignment steps therefore a re-  
markable manufacturing reproducibility..  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
AUTOMOTIVE  
MOTOR CONTROL  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
55  
Unit  
V
DS  
Drain-source Voltage (V = 0)  
V
V
GS  
V
Drain-gate Voltage (R = 20 k)  
55  
DGR  
GS  
V
Gate- source Voltage  
± 15  
60  
V
GS  
I
Drain Current (continuous) at T = 25°C  
A
D
C
I
Drain Current (continuous) at T = 100°C  
42  
A
D
C
I
( )  
Drain Current (pulsed)  
240  
110  
0.73  
16  
A
DM  
P
Total Dissipation at T = 25°C  
W
TOT  
C
Derating Factor  
W/°C  
V/ns  
mJ  
dv/dt (1)  
Peak Diode Recovery voltage slope  
Single Pulse Avalanche Energy  
Storage Temperature  
E
(2)  
400  
AS  
T
stg  
– 55 to 175  
°C  
T
Operating Junction Temperature  
j
() Pulse width limited by safe operating area  
(1)I 40A, di/dt 350A/µs, V V  
, T T  
j JMAX.  
SD  
DD  
(BR)DSS  
(2) Starting T =25°C, I =30A, V =20V  
j
D
DD  
April 2002  
1/9  

STD60NF55L 替代型号

型号 品牌 替代类型 描述 数据表
STD60NF55LT4 STMICROELECTRONICS

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