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STD5NM50-1 PDF预览

STD5NM50-1

更新时间: 2024-09-14 22:28:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
10页 465K
描述
N-CHANNEL 500V - 0.7ohm - 7.5A DPAK/IPAK MDmesh⑩Power MOSFET

STD5NM50-1 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-251包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.66
雪崩能效等级(Eas):300 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (Abs) (ID):5 A
最大漏极电流 (ID):7.5 A最大漏源导通电阻:0.8 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-251
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):50 W最大脉冲漏极电流 (IDM):30 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STD5NM50-1 数据手册

 浏览型号STD5NM50-1的Datasheet PDF文件第2页浏览型号STD5NM50-1的Datasheet PDF文件第3页浏览型号STD5NM50-1的Datasheet PDF文件第4页浏览型号STD5NM50-1的Datasheet PDF文件第5页浏览型号STD5NM50-1的Datasheet PDF文件第6页浏览型号STD5NM50-1的Datasheet PDF文件第7页 
STD5NM50  
STD5NM50-1  
N-CHANNEL 500V - 0.7- 7.5A DPAK/IPAK  
MDmesh™Power MOSFET  
TYPE  
V
DSS  
R
I
D
DS(on)  
STD5NM50  
STD5NM50-1  
500V  
500V  
<0.8Ω  
<0.8Ω  
7.5 A  
7.5 A  
TYPICAL R (on) = 0.7Ω  
HIGH dv/dt AND AVALANCHE CAPABILITIES  
100% AVALANCHE TESTED  
DS  
3
3
2
1
1
LOW INPUT CAPACITANCE AND GATE  
CHARGE  
LOW GATE INPUT RESISTANCE  
TIGHT PROCESS CONTROL AND HIGH  
MANUFACTURING YIELDS  
DPAK  
TO-252  
IPAK  
TO-251  
(Add Suffix “-1”)  
DESCRIPTION  
The MDmesh™ is a new revolutionary MOSFET  
technology that associates the Multiple Drain pro-  
cess with the Company’s PowerMESH™ horizontal  
layout. The resulting product has an outstanding low  
on-resistance, impressively high dv/dt and excellent  
avalanche characteristics. The adoption of the  
Company’s proprietary strip technique yields overall  
dynamic performance that is significantly better than  
that of similar competition’s products.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
The MDmesh™ family is very suitable for increasing  
power density of high voltage converters allowing  
system miniaturization and higher efficiencies.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
500  
500  
±30  
7.5  
Unit  
V
V
Drain-source Voltage (V = 0)  
DS  
GS  
V
Drain-gate Voltage (R = 20 k)  
V
DGR  
GS  
V
GS  
Gate- source Voltage  
V
I
D
Drain Current (continuous) at T = 25°C  
A
C
I
D
Drain Current (continuous) at T = 100°C  
4.7  
A
C
I
( )  
Drain Current (pulsed)  
30  
A
DM  
P
Total Dissipation at T = 25°C  
100  
0.8  
W
TOT  
C
Derating Factor  
W/°C  
V/ns  
dv/dt (1)  
Peak Diode Recovery voltage slope  
Storage Temperature  
15  
T
stg  
– 55 to 150  
°C  
T
Max. Operating Junction Temperature  
j
(1) I 5A, di/dt 400A/µs, V V  
, T T  
(BR)DSS j JMAX.  
SD  
DD  
(•)Pulse width limited by safe operating area  
September 2002  
1/10  

STD5NM50-1 替代型号

型号 品牌 替代类型 描述 数据表
STB9NK50ZT4 STMICROELECTRONICS

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