Datasheet > STD5NM50T4

STD5NM50T4

更新时间： 2024-09-14 23:35:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
10页	171K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 5A I(D) \| TO-252AA

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数据手册

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STD5NM50T4 数据手册

STD5NM50

STD5NM50-1

- 7.5A DPAK/IPAK

N-CHANNEL 500V - 0.7

Ω

MDmesh Power MOSFET

TYPE

DS(on)

DSS

STD5NM50

500V

<0.8Ω

7.5 A

TYPICAL R (on) = 0.7Ω

HIGH dv/dt AND AVALANCHE CAPABILITIES

100% AVALANCHE TESTED

LOW INPUT CAPACITANCE AND GATE

CHARGE

LOW GATE INPUT RESISTANCE

TIGHT PROCESS CONTROL AND HIGH

MANUFACTURING YIELDS

DPAK

TO-252

IPAK

TO-251

(Add Suffix “-1”)

DESCRIPTION

The MDmesh is a new revolutionary MOSFET

technology that associates the Multiple Drain pro-

cess with the Company’s PowerMESH horizontal

layout. The resulting product has an outstanding low

on-resistance, impressively high dv/dt and excellent

avalanche characteristics. The adoption of the

Company’s proprietary strip technique yields overall

dynamic performancethat is significantly better than

that of similar competition’s products.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

The MDmesh family is very suitable for increasing

power density of high voltage converters allowing

system miniaturization and higher efficiencies.

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Drain-source Voltage (V = 0)

Value

500

±30

7.5

Unit

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

Drain Current (continuos) at T = 25°C

Drain Current (continuos) at T = 100°C

4.7

(

)

Drain Current (pulsed)

Total Dissipation at T = 25°C

100

0.8

TOT

Derating Factor

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

Storage Temperature

V/ns

stg

– 55 to 150

°C

Max. Operating Junction Temperature

(•)Pulse width limited by safe operating area

(1) I ≤ 5A, di/dt ≤ 400A/µs, V ≤ V

, T ≤ T

(BR)DSS j JMAX.

March 2002

1/10

12 3 4 5 6 7...10

中文翻译

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