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STD5NM60T4 PDF预览

STD5NM60T4

更新时间: 2024-09-15 06:14:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
18页 562K
描述
N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK

STD5NM60T4 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-252AA包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:16 weeks
风险等级:0.86雪崩能效等级(Eas):200 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):5 A最大漏极电流 (ID):5 A
最大漏源导通电阻:1 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):50 W最大脉冲漏极电流 (IDM):20 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STD5NM60T4 数据手册

 浏览型号STD5NM60T4的Datasheet PDF文件第2页浏览型号STD5NM60T4的Datasheet PDF文件第3页浏览型号STD5NM60T4的Datasheet PDF文件第4页浏览型号STD5NM60T4的Datasheet PDF文件第5页浏览型号STD5NM60T4的Datasheet PDF文件第6页浏览型号STD5NM60T4的Datasheet PDF文件第7页 
STD5NM60  
STB8NM60 - STP8NM60  
N-channel 650 V@Tjmax, 0.9 , 8 A MDmesh™ Power MOSFET  
TO-220, TO-220FP, D2PAK, DPAK, IPAK  
Features  
Type  
VDSS  
RDS(on)  
ID  
Pw  
3
1
STD5NM60  
STD5NM60-1  
STB8NM60  
STP8NM60  
STP8NM60FP  
650 V  
650 V  
650 V  
650 V  
650 V  
< 1 Ω  
< 1 Ω  
< 1 Ω  
< 1 Ω  
< 1 Ω  
5 A  
5 A  
96 W  
96 W  
3
2
DPAK  
1
TO-220FP  
5 A  
100 W  
100 W  
30 W  
3
1
8 A  
8 A(1)  
D²PAK  
3
2
100% avalanche tested  
HIgh dv/dt and avalanche capabilities  
3
1
2
1
TO-220  
IPAK  
Low input capacitance and gate charge  
Low gate input resistance  
Figure 1.  
Internal schematic diagram  
Application  
Switching applications  
Description  
The MDmesh™ is a new revolutionary Power  
MOSFET technology that associates the multiple  
drain process with the company’s PowerMESH™  
horizontal layout. The resulting product has an  
outstanding low on-resistance, impressively high  
dv/dt and excellent avalanche characteristics. The  
adoption of the company’s proprietary strip  
technique yields overall dynamic performance  
that is significantly better than that of similar  
competition’s products.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STD5NM60-1  
STD5NM60T4  
STB8NM60T4  
STP8NM60  
D5NM60  
D5NM60  
B8NM60  
IPAK  
DPAK  
Tube  
Tape & reel  
Tape & reel  
Tube  
PAK  
TO-220  
P8NM60  
STP8NM60FP  
P8NM60FP  
TO-220FP  
Tube  
October 2008  
Rev 17  
1/18  
www.st.com  
18  

STD5NM60T4 替代型号

型号 品牌 替代类型 描述 数据表
FCD5N60TM FAIRCHILD

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600V N-Channel MOSFET
STD5NM60 STMICROELECTRONICS

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N-CHANNEL 600V - 0.8ohm - 5A DPAK MDmesh Power MOSFET

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