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STD5N80K5 PDF预览

STD5N80K5

更新时间: 2024-09-13 14:58:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
18页 630K
描述
N沟道800 V、1.50 Ohm典型值、4 A MDmesh K5功率MOSFET,DPAK封装

STD5N80K5 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:compliant
风险等级:1.69雪崩能效等级(Eas):165 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:800 V最大漏极电流 (Abs) (ID):4 A
最大漏极电流 (ID):4 A最大漏源导通电阻:1.75 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):60 W最大脉冲漏极电流 (IDM):16 A
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STD5N80K5 数据手册

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STD5N80K5  
Datasheet  
N-channel 800 V, 1.50 Ω typ., 4 A MDmesh K5 Power MOSFET  
in a DPAK package  
Features  
V
R
DS(on)  
max.  
I
D
Order code  
DS  
TAB  
STD5N80K5  
800 V  
1.75 Ω  
4 A  
3
2
1
Industry’s lowest RDS(on) x area  
Industry’s best FoM (figure of merit)  
Ultra-low gate charge  
DPAK  
D(2, TAB)  
100% avalanche tested  
Zener-protected  
G(1)  
Applications  
Switching applications  
S(3)  
AM01475V1  
Description  
This very high voltage N-channel Power MOSFET is designed using MDmesh K5  
technology based on an innovative proprietary vertical structure. The result is a  
dramatic reduction in on-resistance and ultra-low gate charge for applications  
requiring superior power density and high efficiency.  
Product status link  
STD5N80K5  
Product summary  
Order code  
Marking  
STD5N80K5  
5N80K5  
Package  
Packing  
DPAK  
Tape and reel  
DS11344 - Rev 4 - July 2019  
www.st.com  
For further information contact your local STMicroelectronics sales office.  

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