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STD5N95K5 PDF预览

STD5N95K5

更新时间: 2024-09-13 14:57:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
17页 545K
描述
N沟道950 V、2 Ohm典型值、3.5 A MDmesh K5功率MOSFET,DPAK封装

STD5N95K5 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:17 weeks风险等级:1.52
雪崩能效等级(Eas):70 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:950 V
最大漏极电流 (ID):3.5 A最大漏源导通电阻:2.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):14 A表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STD5N95K5 数据手册

 浏览型号STD5N95K5的Datasheet PDF文件第2页浏览型号STD5N95K5的Datasheet PDF文件第3页浏览型号STD5N95K5的Datasheet PDF文件第4页浏览型号STD5N95K5的Datasheet PDF文件第5页浏览型号STD5N95K5的Datasheet PDF文件第6页浏览型号STD5N95K5的Datasheet PDF文件第7页 
STD5N95K5  
Datasheet  
N-channel 950 V, 2.0 Ω typ., 3.5 A MDmesh K5 Power MOSFET  
in a DPAK package  
Features  
TAB  
V
R
DS(on)  
max.  
I
D
Order code  
DS  
3
2
STD5N95K5  
950 V  
2.5 Ω  
3.5 A  
1
Industry’s lowest RDS(on) x area  
Industry’s best FoM (figure of merit)  
Ultra-low gate charge  
DPAK  
D(2, TAB)  
100% avalanche tested  
Zener-protected  
G(1)  
Applications  
Switching applications  
S(3)  
Description  
AM01476v1_tab  
This very high voltage N-channel Power MOSFET is designed using MDmesh  
K5 technology based on an innovative proprietary vertical structure. The result is  
a dramatic reduction in on-resistance and ultra-low gate charge for applications  
requiring superior power density and high efficiency.  
Product status link  
STD5N95K5  
Product summary  
Order code  
STD5N95K5  
Marking  
Package  
Packing  
5N95K5  
DPAK  
Tape and reel  
DS9663 - Rev 5 - May 2023  
www.st.com  
For further information contact your local STMicroelectronics sales office.  

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