是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | TO-252 | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 12 weeks |
风险等级: | 1.12 | 雪崩能效等级(Eas): | 100 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 950 V |
最大漏极电流 (Abs) (ID): | 4 A | 最大漏极电流 (ID): | 4 A |
最大漏源导通电阻: | 3.5 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-252 | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 90 W |
最大脉冲漏极电流 (IDM): | 16 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) - annealed | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STD5N95K3TRL | STMICROELECTRONICS |
获取价格 |
4A, 950V, 3.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3 | |
STD5N95K5 | STMICROELECTRONICS |
获取价格 |
N沟道950 V、2 Ohm典型值、3.5 A MDmesh K5功率MOSFET,DPA | |
STD5NB20 | STMICROELECTRONICS |
获取价格 |
N - CHANNEL 200V - 0.70ohm - 5A DPAK PowerMESHO MOSFET | |
STD5NB20T4 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-252AA | |
STD5NB30 | STMICROELECTRONICS |
获取价格 |
N - CHANNEL 300V - 0.75 ohm - 5A - DPAK PowerMESH MOSFET | |
STD5NB30T4 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 5A I(D) | TO-252AA | |
STD5NE10 | STMICROELECTRONICS |
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N - CHANNEL 100V - 0.32 ohm - 5A TO-251/TO-252 STripFET] POWER MOSFET | |
STD5NE10-1 | STMICROELECTRONICS |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-251AA | |
STD5NE10L | STMICROELECTRONICS |
获取价格 |
N - CHANNEL 100V - 0.3 ohm - 5A - DPAK/IPAK STripFET POWER MOSFET | |
STD5NE10L1 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-251AA |