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STD2NK90Z-1 PDF预览

STD2NK90Z-1

更新时间: 2024-09-19 22:25:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
13页 394K
描述
N-CHANNEL 900V-5W-2.1A TO-220/DPAK/IPAK Zener-Protected SuperMESHTM MOSFET

STD2NK90Z-1 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-251AA包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:12 weeks
风险等级:1.7Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):150 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:900 V
最大漏极电流 (Abs) (ID):2.1 A最大漏极电流 (ID):2.1 A
最大漏源导通电阻:6.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-251AAJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):70 W最大脉冲漏极电流 (IDM):8.4 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STD2NK90Z-1 数据手册

 浏览型号STD2NK90Z-1的Datasheet PDF文件第2页浏览型号STD2NK90Z-1的Datasheet PDF文件第3页浏览型号STD2NK90Z-1的Datasheet PDF文件第4页浏览型号STD2NK90Z-1的Datasheet PDF文件第5页浏览型号STD2NK90Z-1的Datasheet PDF文件第6页浏览型号STD2NK90Z-1的Datasheet PDF文件第7页 
STP2NK90Z - STD2NK90Z  
STD2NK90Z-1  
N-CHANNEL 900V - 5- 2.1A TO-220/DPAK/IPAK  
Zener-Protected SuperMESH™MOSFET  
Table 1: General Features  
Figure 1: Package  
TYPE  
V
R
I
D
Pw  
DSS  
DS(on)  
STD2NK90Z  
STD2NK90Z-1 900 V < 6.5  
STP2NK90Z 900 V < 6.5 Ω  
900 V < 6.5 Ω  
2.1 A  
2.1 A  
2.1 A  
70 W  
70 W  
70 W  
3
TYPICAL R (on) = 5  
DS  
1
EXTREMELY HIGH dv/dt CAPABILITY  
IMPROVED ESD CAPABILITY  
100% AVALANCHE RATED  
DPAK  
TO-220  
GATE CHARGE MINIMIZED  
VERY LOW INTRINSIC CAPACITANCES  
VERY GOOD MANUFACTURING  
REPEATIBILITY  
3
2
1
IPAK  
DESCRIPTION  
The SuperMESH™ series is obtained through an  
extreme optimization of ST’s well established  
stripbased PowerMESH™ layout. In addition to  
pushing on-resistance significantly down, special  
care is taken to ensure a very good dv/dt capability  
for the most demanding applications. Such series  
complements ST full range of high voltage MOS-  
FETs including revolutionary MDmesh™ products.  
Figure 2: Internal Schematic Diagram  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
IDEAL FOR OFF-LINE POWER SUPPLIES,  
ADAPTORS AND PFC  
Table 2: Order Codes  
SALES TYPE  
STD2NK90ZT4  
STD2NK90Z-1  
STP2NK90Z  
MARKING  
D2NK90Z  
D2NK90Z  
P2NK90Z  
PACKAGE  
DPAK  
PACKAGING  
TAPE & REEL  
TUBE  
IPAK  
TO-220  
TUBE  
Rev. 2  
October 2004  
1/13  

STD2NK90Z-1 替代型号

型号 品牌 替代类型 描述 数据表
FQU2N90TU FAIRCHILD

功能相似

Power Field-Effect Transistor, 1.7A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Met
FQU2N90 FAIRCHILD

功能相似

900V N-Channel MOSFET

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