STD2NM60

更新时间： 2024-09-19 22:28:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
10页	476K
描述
N-CHANNEL 600V - 2.8ohm - 2A DPAK/IPAK Zener-Protected MDmesh⑩Power MOSFET

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STD2NM60 数据手册

STD2NM60

STD2NM60-1

N-CHANNEL 600V - 2.8Ω - 2A DPAK/IPAK

Zener-Protected MDmesh™Power MOSFET

TYPE

DSS

DS(on)

STD2NM60

STD2NM60-1

600V

< 3.2 Ω

2 A

■

TYPICAL R (on) = 2.8 Ω

HIGH dv/dt AND AVALANCHE CAPABILITIES

100% AVALANCHE TESTED

LOW INPUT CAPACITANCE AND GATE

CHARGE

DPAK

TO-252

■

LOW GATE INPUT RESISTANCE

TIGHT PROCESS CONTROL AND HIGH

MANUFACTORING YIELDS

IPAK

TO-251

DESCRIPTION

The MDmesh™ is a new revolutionary MOSFET

technology that associates the Multiple Drain pro-

cess with the Company’s PowerMESH™ horizontal

layout. The resulting product has an outstanding low

on-resistance, impressively high dv/dt and excellent

avalanche characteristics. The adoption of the

Company’s proprietary strip technique yields overall

dynamic performance that is significantly better than

that of similar completition’s products.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

The MDmesh™ family is very suitable for increase

the power density of high voltage converters allow-

ing system miniaturization and higher efficiencies.

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

Drain-source Voltage (V = 0)

600

Drain-gate Voltage (R = 20 kΩ)

600

DGR

Gate- source Voltage

±30

Drain Current (continuous) at T = 25°C

Drain Current (continuous) at T = 100°C

1.26

(●)

Drain Current (pulsed)

Total Dissipation at T = 25°C

0.37

TOT

Derating Factor

W/°C

V/ns

°C

Gate source ESD(HBM-C=100pF, R=1.5KΩ)

Peak Diode Recovery voltage slope

Storage Temperature

ESD(G-S)

dv/dt(1)

–65 to 150

150

stg

Max. Operating Junction Temperature

(•)Pulse width limited by safe operating area

(1)I <2A, di/dt<400A/µs, V <V

, T <T

J JMAX

(BR)DSS

September 2002

1/10

12 3 4 5 6 7...10

中文翻译

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与STD2NM60相关器件

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STD2NM60-1	STMICROELECTRONICS	获取价格	N-CHANNEL 600V - 2.8ohm - 2A DPAK/IPAK Zener-
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STD30100	JSMC	获取价格	TO-220
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STD3055L	SAMHOP	获取价格	N-Channel Logic Level E nhancement Mode F ield E ffect Transistor
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