生命周期: | Active | 包装说明: | R-CXMA-X2 |
针数: | 2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.8 | 击穿电压标称值: | 75 V |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JESD-30 代码: | R-CXMA-X2 |
最大非重复峰值反向功率耗散: | 60000 W | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | MICROELECTRONIC ASSEMBLY |
极性: | BIDIRECTIONAL | 最大功率耗散: | 400 W |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 56 V |
子类别: | Transient Suppressors | 表面贴装: | NO |
技术: | AVALANCHE | 端子形式: | UNSPECIFIED |
端子位置: | UNSPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STB60K89S | SSDI |
获取价格 |
Trans Voltage Suppressor Diode, 60000W, 62V V(RWM), Bidirectional, 1 Element, Silicon, HER | |
STB60K9.8P | SSDI |
获取价格 |
Trans Voltage Suppressor Diode, 60000W, 6.8V V(RWM), Bidirectional, 1 Element, Silicon, HE | |
STB60K98S | SSDI |
获取价格 |
Trans Voltage Suppressor Diode, 60000W, 68V V(RWM), Bidirectional, 1 Element, Silicon, HER | |
STB60N03L-10 | STMICROELECTRONICS |
获取价格 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
STB60N03L-10-1 | STMICROELECTRONICS |
获取价格 |
60A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, I2PAK-3 | |
STB60N03L-10T4 | STMICROELECTRONICS |
获取价格 |
60A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3 | |
STB60N06-14 | STMICROELECTRONICS |
获取价格 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
STB60N06-14-1 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 60A I(D) | TO-262AA | |
STB60N55F3 | STMICROELECTRONICS |
获取价格 |
N-channel 55V - 6.5mohm - 80A - DPAK - IPAK - D2PAK - TO-220/FP STripFET TM Power MOSFET | |
STB60N55F3_09 | STMICROELECTRONICS |
获取价格 |
N-channel 55 V, 6.5 mΩ, 80 A, DPAK, IPAK, D2P |