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STB60NE06L-16 PDF预览

STB60NE06L-16

更新时间: 2024-11-22 22:06:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
8页 87K
描述
N - CHANNEL 60V - 0.014ohm - 60A D2PAK STripFET POWER MOSFET

STB60NE06L-16 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:D2PAK包装说明:D2PAK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.67
雪崩能效等级(Eas):400 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):60 A最大漏极电流 (ID):60 A
最大漏源导通电阻:0.016 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):245
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):150 W
最大脉冲漏极电流 (IDM):240 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STB60NE06L-16 数据手册

 浏览型号STB60NE06L-16的Datasheet PDF文件第2页浏览型号STB60NE06L-16的Datasheet PDF文件第3页浏览型号STB60NE06L-16的Datasheet PDF文件第4页浏览型号STB60NE06L-16的Datasheet PDF文件第5页浏览型号STB60NE06L-16的Datasheet PDF文件第6页浏览型号STB60NE06L-16的Datasheet PDF文件第7页 
STB60NE06L-16  
2
N - CHANNEL 60V - 0.014- 60A D PAK  
STripFET POWER MOSFET  
TYPE  
VDSS  
RDS(on)  
ID  
STB60NE06L-16  
60 V  
< 0.16 Ω  
60 A  
TYPICAL RDS(on) = 0.014 Ω  
AVALANCHERUGGED TECHNOLOGY  
LOW GATE CHARGE  
HIGH CURRENT CAPABILITY  
175 oC OPERATING TEMPERATURE  
LOW THRESHOLD DRIVE  
FOR THROUGH-HOLE VERSION CONTACT  
SALES OFFICE  
3
1
D2PAK  
TO-263  
DESCRIPTION  
(suffix ”T4”)  
This Power Mosfet is the latest development of  
STMicroelectronis unique ”Single Feature Size ”  
strip-based process. The resulting transistor  
shows extremely high packing density for low  
on-resistance, rugged avalance characteristics  
and less critical alignment steps therefore a  
remarkable manufacturingreproducibility.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SOLENOID AND RELAY DRIVERS  
DC-DC & DC-AC CONVERTERS  
AUTOMOTIVE ENVIRONMENT  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
VDGR  
VGS  
ID  
Parameter  
Value  
60  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
V
V
60  
15  
V
±
o
Drain Current (continuous) at Tc = 25 C  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
60  
A
ID  
42  
A
I
DM()  
240  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
150  
W
Derating Factor  
1
W/oC  
V/ns  
oC  
oC  
dv/dt  
Tstg  
Tj  
Peak Diode Recovery voltage slope  
Storage Temperature  
1
-65 to 175  
Max. Operating Junction Temperature  
175  
() Pulse width limited by safe operating area  
(1) ISD 60 A, di/dt 300 A/µs, VDD V(BR)DSS, Tj TJMAX  
1/8  
May 2000  

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