Datasheet > STB60NE06L-16T4

STB60NE06L-16T4

更新时间： 2024-11-22 23:34:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
9页	145K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 60A I(D) \| TO-263AB

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STB60NE06L-16T4 数据手册

STB60NE06L-16

N-CHANNEL 60V - 0.014 Ω - 60A D PAK

STripFET II POWER MOSFET

TYPE

DSS

DS(on)

STB60NE06L-16

60 V

<0.016 Ω

60 A

■

TYPICAL R (on) = 0.014 Ω

AVALANCHE RUGGED TECHNOLOGY

LOW GATE CHARGE

HIGH CURRENT CAPABILITY

175 C OPERATING TEMPERATURE

LOW THRESHOLD DRIVE

D PAK

TO-263

SURFACE-MOUNTING D PAK (TO-263)

POWER PACKAGE IN TUBE (NO SUFFIX) OR

IN TAPE & REEL (SUFFIX “T4”)

(Suffix “T4”)

DESCRIPTION

INTERNAL SCHEMATIC DIAGRAM

This Power MOSFET is the latest development of

STMicroelectronis unique ”Single Feature Size

”

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

APPLICATIONS

■

HIGH CURRENT, HIGH SWITCHING SPEED

SOLENOID AND RELAY DRIVERS

DC-DC & DC-AC CONVERTERS

AUTOMOTIVE ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

Drain-source Voltage (V = 0)

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

± 15

Drain Current (continuous) at T = 25°C

Drain Current (continuous) at T = 100°C

(•)

Drain Current (pulsed)

240

150

Total Dissipation at T = 25°C

tot

Derating Factor

W/°C

V/ns

(1)

(2)

Peak Diode Recovery voltage slope

dv/dt

Single Pulse Avalanche Energy

Storage Temperature

400

stg

-55 to 175

°C

Operating Junction Temperature

(•) Pulse width limited by safe operating area.

(1) I

≤60A, di/dt ≤300A/µs, V

≤ V

, T ≤ T

j JMAX

(2) Starting T = 25 C, I = 60A, V

(BR)DSS

= 35V

March 2002

1/9

12 3 4 5 6 7...9

中文翻译

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