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STB60NH02L_04 PDF预览

STB60NH02L_04

更新时间: 2024-02-23 08:09:50
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
11页 581K
描述
N-CHANNEL 24V - 0.0085 ohm - 60A D2PAK STripFET TM III POWER MOSFET

STB60NH02L_04 数据手册

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STB60NH02L  
N-CHANNEL 24V - 0.0085 - 60A D²PAK  
STripFET™ III POWER MOSFET  
V
R
I
TYPE  
DSS  
DS(on)  
D
STB60NH02L  
24 V  
< 0.0105 Ω  
60 A  
TYPICAL RDS(on) = 0.0085 @ 10 V  
TYPICAL RDS(on) = 0.012 @ 5 V  
RDS(ON) * Qg INDUSTRY’s BENCHMARK  
CONDUCTION LOSSES REDUCED  
SWITCHING LOSSES REDUCED  
LOW THRESHOLD DEVICE  
SURFACE-MOUNTING D2PAK (TO-263)  
POWER PACKAGE IN TUBE (NO SUFFIX) OR  
IN TAPE & REEL (SUFFIX “T4”)  
3
1
2
D PAK  
TO-263  
(Suffix “T4”)  
DESCRIPTION  
The STB60NH02L utilizes the latest advanced design  
rules of ST’s proprietary STripFET™ technology. This is  
suitable fot the most demanding DC-DC converter  
application where high efficiency is to be achieved.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
SPECIFICALLY DESIGNED AND OPTIMISED  
FOR HIGH EFFICIENCY DC/DC CONVERTES  
Ordering Information  
SALES TYPE  
STB60NH02LT4  
MARKING  
B60NH02L  
PACKAGE  
TO-263  
PACKAGING  
TAPE & REEL  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
V
Drain-source Voltage Rating  
30  
24  
spike(1)  
V
DS  
Drain-source Voltage (V = 0)  
V
GS  
V
DGR  
Drain-gate Voltage (R = 20 k)  
24  
V
GS  
V
Gate- source Voltage  
± 20  
60  
V
GS  
I
Drain Current (continuous) at T = 25°C  
A
D
C
I
Drain Current (continuous) at T = 100°C  
43  
A
D
C
(2)  
I
Drain Current (pulsed)  
240  
70  
A
DM  
P
Total Dissipation at T = 25°C  
W
tot  
C
Derating Factor  
0.47  
280  
W/°C  
mJ  
(3)  
E
AS  
Single Pulse Avalanche Energy  
Storage Temperature  
T
stg  
-55 to 175  
°C  
T
Max. Operating Junction Temperature  
j
May 2004  
1/11  

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