Datasheet > STB60NH02L_04

STB60NH02L_04

更新时间： 2024-11-26 04:02:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
11页	581K
描述
N-CHANNEL 24V - 0.0085 ohm - 60A D2PAK STripFET TM III POWER MOSFET

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STB60NH02L_04 数据手册

STB60NH02L

N-CHANNEL 24V - 0.0085 Ω - 60A D²PAK

STripFET™ III POWER MOSFET

TYPE

DSS

DS(on)

STB60NH02L

24 V

< 0.0105 Ω

60 A

■

TYPICAL R_DS(on) = 0.0085 Ω @ 10 V

TYPICAL R_DS(on) = 0.012 Ω @ 5 V

R_DS(ON)* Qg INDUSTRY’s BENCHMARK

CONDUCTION LOSSES REDUCED

SWITCHING LOSSES REDUCED

LOW THRESHOLD DEVICE

SURFACE-MOUNTING D²PAK (TO-263)

POWER PACKAGE IN TUBE (NO SUFFIX) OR

IN TAPE & REEL (SUFFIX “T4”)

D PAK

TO-263

(Suffix “T4”)

DESCRIPTION

The STB60NH02L utilizes the latest advanced design

rules of ST’s proprietary STripFET™ technology. This is

suitable fot the most demanding DC-DC converter

application where high efficiency is to be achieved.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

SPECIFICALLY DESIGNED AND OPTIMISED

FOR HIGH EFFICIENCY DC/DC CONVERTES

Ordering Information

SALES TYPE

STB60NH02LT4

MARKING

B60NH02L

PACKAGE

TO-263

PACKAGING

TAPE & REEL

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

Drain-source Voltage Rating

spike(1)

Drain-source Voltage (V = 0)

DGR

Drain-gate Voltage (R = 20 kΩ)

Gate- source Voltage

± 20

Drain Current (continuous) at T = 25°C

Drain Current (continuous) at T = 100°C

(2)

Drain Current (pulsed)

240

Total Dissipation at T = 25°C

tot

Derating Factor

0.47

280

W/°C

(3)

Single Pulse Avalanche Energy

Storage Temperature

stg

-55 to 175

°C

Max. Operating Junction Temperature

May 2004

1/11

12 3 4 5 6 7...11

中文翻译

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