5秒后页面跳转
STB60NF06 PDF预览

STB60NF06

更新时间: 2024-09-24 22:42:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
9页 427K
描述
N-CHANNEL 60V - 0.014ohm - 60A D2PAK STripFET⑩ POWER MOSFET

STB60NF06 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.11
Is Samacsys:N雪崩能效等级(Eas):360 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):60 A最大漏极电流 (ID):60 A
最大漏源导通电阻:0.016 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):110 W
最大脉冲漏极电流 (IDM):240 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STB60NF06 数据手册

 浏览型号STB60NF06的Datasheet PDF文件第2页浏览型号STB60NF06的Datasheet PDF文件第3页浏览型号STB60NF06的Datasheet PDF文件第4页浏览型号STB60NF06的Datasheet PDF文件第5页浏览型号STB60NF06的Datasheet PDF文件第6页浏览型号STB60NF06的Datasheet PDF文件第7页 
STB60NF06  
N-CHANNEL 60V - 0.014- 60A D2PAK  
STripFET™ POWER MOSFET  
TYPE  
V
DSS  
R
I
D
DS(on)  
STB60NF06  
60V  
< 0.016 Ω  
60A  
TYPICAL R (on) = 0.014Ω  
DS  
EXCEPTIONAL dv/dt CAPABILITY  
100% AVALANCHE TESTED  
APPLICATION ORIENTED  
CHARACTERIZATION  
3
1
ADD SUFFIX “T4” FOR ORDERING IN TAPE &  
REEL  
D2PAK  
DESCRIPTION  
This Power Mosfet series realized with STMicro-  
electronics unique STripFET process has specifical-  
ly been designed to minimize input capacitance and  
gate charge. It is therefore suitable as primary  
switch in advanced high-efficiency isolated DC-DC  
converters for Telecom and Computer application. It  
is also intended for any application with low gate  
charge drive requirements.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH-EFFICIENCY DC-DC CONVERTERS  
UPS AND MOTOR CONTROL  
AUTOMOTIVE  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
60  
Unit  
V
DS  
Drain-source Voltage (V = 0)  
V
V
GS  
V
Drain-gate Voltage (R = 20 k)  
60  
DGR  
GS  
V
Gate- source Voltage  
± 20  
60  
V
GS  
I
Drain Current (continuos) at T = 25°C  
A
D
C
I
Drain Current (continuos) at T = 100°C  
42  
A
D
C
I
()  
Drain Current (pulsed)  
240  
A
DM  
P
TOT  
Total Dissipation at T = 25°C  
110  
W
C
Derating Factor  
0.73  
4
W/°C  
V/ns  
°C  
°C  
dv/dt (1)  
Peak Diode Recovery voltage slope  
Storage Temperature  
T
stg  
–65 to 175  
175  
T
Max. Operating Junction Temperature  
j
() Pulse width limited by safe operating area  
(1) I 60A, di/dt400 A/µs, V 24V, TjT  
jMAX  
SD  
DD  
February 2001  
1/9  

STB60NF06 替代型号

型号 品牌 替代类型 描述 数据表
STB60NF06L STMICROELECTRONICS

完全替代

N-CHANNEL 60V - 0.012 OHM - 60A TO-220/TO-220
STB60NF06LT4 STMICROELECTRONICS

功能相似

N-channel 60V - 0.012Ω - 60A - TO-220/D2PAK/
STB60NF06T4 STMICROELECTRONICS

功能相似

N-channel 60V - 0.014ヘ - 60A - D2PAK/I2PAK ST

与STB60NF06相关器件

型号 品牌 获取价格 描述 数据表
STB60NF06_06 STMICROELECTRONICS

获取价格

N-channel 60V - 0.014ヘ - 60A - D2PAK/I2PAK ST
STB60NF06-1 STMICROELECTRONICS

获取价格

N-channel 60V - 0.014ヘ - 60A - D2PAK/I2PAK ST
STB60NF06-1T4 STMICROELECTRONICS

获取价格

60A, 60V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, D2PAK-3
STB60NF06L STMICROELECTRONICS

获取价格

N-CHANNEL 60V - 0.012 OHM - 60A TO-220/TO-220
STB60NF06L_06 STMICROELECTRONICS

获取价格

N-channel 60V - 0.012ヘ - 60A - TO-220/D2PAK/T
STB60NF06LT4 STMICROELECTRONICS

获取价格

N-channel 60V - 0.012Ω - 60A - TO-220/D2PAK/
STB60NF06T4 STMICROELECTRONICS

获取价格

N-channel 60V - 0.014ヘ - 60A - D2PAK/I2PAK ST
STB60NF10 STMICROELECTRONICS

获取价格

N-CHANNEL 100V - 0.019ohm - 80A D2PAK/TO-220 STripFET II POWER MOSFET
STB60NF10_06 STMICROELECTRONICS

获取价格

N-channel 100V - 0.019Ω - 80A - TO-220 - D2PA
STB60NF10-1 STMICROELECTRONICS

获取价格

N-channel 100V - 0.019Ω - 80A - TO-220 - D2PA