Datasheet > STB60NE06-1

STB60NE06-1

更新时间： 2024-11-25 22:07:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
9页	117K
描述
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

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数据手册

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STB60NE06-1 数据手册

STB60NE06-16

N - CHANNEL ENHANCEMENT MODE

” SINGLE FEATURE SIZE ” POWER MOSFET

TYPE

V_DSS

R_DS(on)

I_D

STB60NE06-1

60 V

< 0.016 Ω

60 A

■

TYPICAL R_DS(on)= 0.013 Ω

EXCEPTIONAL dV/dt CAPABILTY

100% AVALANCHE TESTED

LOW GATE CHARGE 100 ^oC

HIGH dV/dt CAPABILITY

APPLICATION ORIENTED

CHARACTERIZATION

FOR THROUGH-HOLE VERSION CONTACT

SALES OFFICE

D²PAK

TO-263

■

(Suffix ”T4”)

DESCRIPTION

This Power Mosfet is the latest development of

SGS-THOMSON unique ” Single Feature Size

”

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remark-

able manufacturingreproducibility.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

DC MOTOR CONTROL

DC-DC & DC-AC CONVERTERS

SYNCHRONOUS RECTIFICATION

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

V_DGR

V_GS

I_D

Parameter

Value

Unit

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at T_c= 25 ^oC

Drain Current (continuous) at T_c= 100 ^oC

Drain Current (pulsed)

± 20

I_D

_DM(• )

240

P_tot

Total Dissipation at T_c= 25 ^oC

150

Derating Factor

W/^oC

V/ns

^oC

dV/dt(¹) Peak Diode Recovery voltage slope

T_stg

Storage Temperature

-65 to 175

T_j

Max. Operating Junction Temperature

175

(•) Pulse width limited by safe operating area

(1) I_SD≤ 60 A, di/dt ≤ 200 A/µs, V_DD≤ V_(BR)DSS, T_J≤ T_JMAX

1/9

January 1998

12 3 4 5 6 7...9

中文翻译

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与STB60NE06-1相关器件

型号	品牌	获取价格	描述	数据表
STB60NE06-16	STMICROELECTRONICS	获取价格	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
STB60NE06-16T4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 60A I(D) \| TO-263AB
STB60NE06L-16	STMICROELECTRONICS	获取价格	N - CHANNEL 60V - 0.014ohm - 60A D2PAK STripFET POWER MOSFET
STB60NE06L-16T4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 60A I(D) \| TO-263AB
STB60NF03L	STMICROELECTRONICS	获取价格	N-CHANNEL 30V - 0.008 ohm - 60A D2PAK STripFET POWER MOSFET
STB60NF03LT4	STMICROELECTRONICS	获取价格	60A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3
STB60NF06	STMICROELECTRONICS	获取价格	N-CHANNEL 60V - 0.014ohm - 60A D2PAK STripFET
STB60NF06_06	STMICROELECTRONICS	获取价格	N-channel 60V - 0.014ヘ - 60A - D2PAK/I2PAK ST
STB60NF06-1	STMICROELECTRONICS	获取价格	N-channel 60V - 0.014ヘ - 60A - D2PAK/I2PAK ST
STB60NF06-1T4	STMICROELECTRONICS	获取价格	60A, 60V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, D2PAK-3